JANTX2N3019SP
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- Mfr.Part #
- JANTX2N3019SP
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- SMALL-SIGNAL BJT
- Stock
- 39,784
- In Stock ：
- 39,784
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- NPN
- Mounting Type :
- Through Hole
- RoHS :
- N
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Manufacturer :
- Microchip
- Brand :
- Microchip / Microsemi
- Subcategory :
- Transistors
- Product Type :
- BJTs - Bipolar Transistors
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA, 10V
- Package :
- Bulk
- Current - Collector Cutoff (Max) :
- 10nA
- Voltage - Collector Emitter Breakdown (Max) :
- 80 V
- Product Category :
- Bipolar Transistors - BJT
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Power - Max :
- 800 mW
- Series :
- Military, MIL-PRF-19500/391
- Supplier Device Package :
- TO-39 (TO-205AD)
- Current - Collector (Ic) (Max) :
- 1 A
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Product Status :
- Active
- Frequency - Transition :
- -
- Datasheets
- JANTX2N3019SP
NPN -65°C ~ 200°C (TJ) 10nA TO-205AD, TO-39-3 Metal Can Through Hole
JANTX2N3019SP Overview
In this device, the DC current gain is 100 @ 150mA, 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 50mA, 500mA.Supplier device package TO-39 (TO-205AD) comes with the product.The device exhibits a collector-emitter breakdown at 80 V.
JANTX2N3019SP Features
the DC current gain for this device is 100 @ 150mA, 10V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the supplier device package of TO-39 (TO-205AD)
JANTX2N3019SP Applications
There are a lot of Microchip Technology
JANTX2N3019SP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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