JANTX2N3019S

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Operating Temperature :

-65°C~200°C TJ

Max Power Dissipation :

800mW

Case Connection :

COLLECTOR

Pin Count :

2

RoHS Status :

Non-RoHS Compliant

Packaging :

Bulk

Published :

2007

Mount :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 500mA 10V

Factory Lead Time :

23 Weeks

Terminal Finish :

Tin/Lead (Sn/Pb)

ECCN Code :

EAR99

Current - Collector Cutoff (Max) :

10nA

Collector Emitter Breakdown Voltage :

80V

Number of Elements :

1

Terminal Form :

Wire

Collector Base Voltage (VCBO) :

140V

Transistor Type :

NPN

Max Collector Current :

1A

Number of Terminations :

3

JESD-609 Code :

e0

Collector Emitter Voltage (VCEO) :

80V

Number of Pins :

3

Package / Case :

TO-205AD, TO-39-3 Metal Can

Power Dissipation :

800mW

Qualification Status :

Qualified

Pbfree Code :

No

Mounting Type :

Through Hole

Polarity/Channel Type :

NPN

Configuration :

Single

Terminal Position :

BOTTOM

Radiation Hardening :

No

Transistor Element Material :

SILICON

Series :

Military, MIL-PRF-19500/391

Lead Free :

Contains Lead

Emitter Base Voltage (VEBO) :

7V

Transistor Application :

SWITCHING