JANTX2N2905A
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- Mfr.Part #
- JANTX2N2905A
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.6A TO39
- Stock
- 87
- In Stock ：
- 87
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Contact Plating :
- Lead, Tin
- Mounting Type :
- Through Hole
- Mount :
- Through Hole
- Configuration :
- Single
- Max Power Dissipation :
- 800mW
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Transition Frequency :
- 200MHz
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Terminal Position :
- BOTTOM
- Number of Pins :
- 3
- Max Collector Current :
- 600mA
- Power - Max :
- 800mW
- Collector Base Voltage (VCBO) :
- 60V
- Collector Emitter Voltage (VCEO) :
- 60V
- Collector Emitter Breakdown Voltage :
- 60V
- Terminal Form :
- Wire
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Series :
- Military, MIL-PRF-19500/290
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- PNP
- Qualification Status :
- Qualified
- Pbfree Code :
- No
- Factory Lead Time :
- 23 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 1.6V @ 50mA, 500mA
- JESD-609 Code :
- e0
- Current - Collector Cutoff (Max) :
- 1μA
- Turn On Time-Max (ton) :
- 45ns
- Number of Terminations :
- 3
- Lead Free :
- Contains Lead
- Pin Count :
- 2
- ECCN Code :
- EAR99
- Power Dissipation :
- 600mW
- Packaging :
- Bulk
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Published :
- 2002
- Case Connection :
- COLLECTOR
- Transistor Type :
- PNP
- RoHS Status :
- Non-RoHS Compliant
- Operating Temperature :
- -65°C~200°C TJ
- Datasheets
- JANTX2N2905A
PNP -65°C~200°C TJ 1μA 1 Elements 3 Terminations SILICON PNP TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JANTX2N2905A Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 150mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.6V @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 200MHz.During maximum operation, collector current can be as low as 600mA volts.
JANTX2N2905A Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 200MHz
JANTX2N2905A Applications
There are a lot of Microsemi Corporation
JANTX2N2905A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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