JANTX2N2605
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- Mfr.Part #
- JANTX2N2605
- Manufacturer
- Microchip Technology
- Package / Case
- TO-206AB, TO-46-3 Metal Can
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.03A TO46
- Stock
- 190
- In Stock ：
- 190
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Published :
- 2007
- Collector Base Voltage (VCBO) :
- 70V
- Polarity/Channel Type :
- PNP
- Mount :
- Through Hole
- Case Connection :
- COLLECTOR
- RoHS Status :
- Non-RoHS Compliant
- Transistor Type :
- PNP
- Packaging :
- Bulk
- Number of Elements :
- 1
- Pbfree Code :
- No
- Current - Collector Cutoff (Max) :
- 10nA
- Power Dissipation :
- 400mW
- Mounting Type :
- Through Hole
- Transistor Application :
- AMPLIFIER
- Configuration :
- Single
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Collector Emitter Breakdown Voltage :
- 60V
- Package / Case :
- TO-206AB, TO-46-3 Metal Can
- Terminal Position :
- BOTTOM
- Number of Terminations :
- 3
- Terminal Form :
- Wire
- Factory Lead Time :
- 23 Weeks
- Collector Emitter Voltage (VCEO) :
- 60V
- ECCN Code :
- EAR99
- JESD-609 Code :
- e0
- Pin Count :
- 3
- Emitter Base Voltage (VEBO) :
- 6V
- Qualification Status :
- Qualified
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 500μA, 10mA
- Max Collector Current :
- 30mA
- Series :
- Military, MIL-PRF-19500/354
- Operating Temperature :
- -65°C~200°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 5V
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Radiation Hardening :
- No
- Number of Pins :
- 3
- Max Power Dissipation :
- 400mW
- Datasheets
- JANTX2N2605
PNP -65°C~200°C TJ 10nA 1 Elements 3 Terminations SILICON PNP TO-206AB, TO-46-3 Metal Can Bulk Through Hole
JANTX2N2605 Overview
This device has a DC current gain of 100 @ 10mA 5V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 6V to achieve high efficiency.The maximum collector current is 30mA volts.
JANTX2N2605 Features
the DC current gain for this device is 100 @ 10mA 5V
the vce saturation(Max) is 300mV @ 500μA, 10mA
the emitter base voltage is kept at 6V
JANTX2N2605 Applications
There are a lot of Microsemi Corporation
JANTX2N2605 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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