JANTX2N2222AUB
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- Mfr.Part #
- JANTX2N2222AUB
- Manufacturer
- Microchip Technology
- Package / Case
- 3-SMD, No Lead
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.8A UB
- Stock
- 14
- In Stock ：
- 14
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 50V
- Max Collector Current :
- 800mA
- Transistor Type :
- NPN
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Current - Collector (Ic) (Max) :
- 800mA
- Factory Lead Time :
- 8 Weeks
- Collector Base Voltage (VCBO) :
- 75V
- Power Dissipation :
- 500mW
- Series :
- Military, MIL-PRF-19500/255
- Operating Temperature :
- -65°C~200°C TJ
- Number of Pins :
- 3
- RoHS Status :
- Non-RoHS Compliant
- Packaging :
- Bulk
- Emitter Base Voltage (VEBO) :
- 6V
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Supplier Device Package :
- UB
- Mounting Type :
- Surface Mount
- Max Operating Temperature :
- 200°C
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Power - Max :
- 500mW
- Polarity :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 1996
- Current - Collector Cutoff (Max) :
- 50nA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Lead Free :
- Contains Lead
- Max Power Dissipation :
- 500mW
- Min Operating Temperature :
- -65°C
- Package / Case :
- 3-SMD, No Lead
- Collector Emitter Voltage (VCEO) :
- 50V
- Mount :
- Surface Mount
- Datasheets
- JANTX2N2222AUB
NPN -65°C~200°C TJ 50nA 1 Elements 3-SMD, No Lead Bulk Surface Mount
JANTX2N2222AUB Overview
In this device, the DC current gain is 100 @ 150mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 50mA, 500mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.Supplier device package UB comes with the product.The device exhibits a collector-emitter breakdown at 50V.Maximum collector currents can be below 800mA volts.
JANTX2N2222AUB Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the supplier device package of UB
JANTX2N2222AUB Applications
There are a lot of Microsemi Corporation
JANTX2N2222AUB applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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