JANTX2N2222A
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- Mfr.Part #
- JANTX2N2222A
- Manufacturer
- Microchip Technology
- Package / Case
- TO-206AA, TO-18-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.8A TO218
- Stock
- 16,135
- In Stock ：
- 16,135
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 4 weeks ago)
- Max Operating Temperature :
- 200°C
- Number of Elements :
- 1
- Factory Lead Time :
- 8 Weeks
- Collector Emitter Breakdown Voltage :
- 50V
- Emitter Base Voltage (VEBO) :
- 6V
- Number of Pins :
- 3
- Lead Free :
- Contains Lead
- Max Collector Current :
- 800mA
- Polarity :
- NPN
- Current - Collector Cutoff (Max) :
- 50nA
- hFE Min :
- 100
- Collector Base Voltage (VCBO) :
- 75V
- Current - Collector (Ic) (Max) :
- 800mA
- Transistor Type :
- NPN
- Package / Case :
- TO-206AA, TO-18-3 Metal Can
- Min Operating Temperature :
- -65°C
- RoHS Status :
- Non-RoHS Compliant
- Max Junction Temperature (Tj) :
- 200°C
- Radiation Hardening :
- No
- Operating Temperature :
- -65°C~200°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Collector Emitter Saturation Voltage :
- 1V
- Mount :
- Through Hole
- Height :
- 5.33mm
- Power Dissipation :
- 500mW
- Mounting Type :
- Through Hole
- Published :
- 1996
- Collector Emitter Voltage (VCEO) :
- 50V
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Series :
- Military, MIL-PRF-19500/255
- Supplier Device Package :
- TO-218
- Power - Max :
- 500mW
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Max Power Dissipation :
- 500mW
- Packaging :
- Bulk
- Datasheets
- JANTX2N2222A
NPN -65°C~200°C TJ 50nA 1 Elements TO-206AA, TO-18-3 Metal Can Bulk Through Hole
JANTX2N2222A Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 10V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 50mA, 500mA.The emitter base voltage can be kept at 6V for high efficiency.This product comes in a TO-218 device package from the supplier.Device displays Collector Emitter Breakdown (50V maximal voltage).Single BJT transistor is possible to have a collector current as low as 800mA volts at Single BJT transistors maximum.
JANTX2N2222A Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the supplier device package of TO-218
JANTX2N2222A Applications
There are a lot of Microsemi Corporation
JANTX2N2222A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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