JANTX2N2218A
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- Mfr.Part #
- JANTX2N2218A
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.8A TO39
- Stock
- 32,494
- In Stock ：
- 32,494
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 800mA
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Factory Lead Time :
- 23 Weeks
- JESD-609 Code :
- e0
- Terminal Form :
- Wire
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 10V
- Collector Base Voltage (VCBO) :
- 75V
- Number of Terminations :
- 3
- Power Dissipation :
- 800mW
- Transition Frequency :
- 250MHz
- Series :
- Military, MIL-PRF-19500/251
- Mount :
- Through Hole
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- RoHS Status :
- Non-RoHS Compliant
- Radiation Hardening :
- No
- Operating Temperature :
- -55°C~200°C TJ
- Configuration :
- Single
- Polarity/Channel Type :
- NPN
- Current - Collector Cutoff (Max) :
- 10nA
- Terminal Position :
- BOTTOM
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- ECCN Code :
- EAR99
- Case Connection :
- COLLECTOR
- Emitter Base Voltage (VEBO) :
- 6V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 2
- Max Power Dissipation :
- 800mW
- Transistor Application :
- SWITCHING
- JEDEC-95 Code :
- TO-5
- Qualification Status :
- Qualified
- Number of Pins :
- 3
- Pbfree Code :
- No
- Packaging :
- Bulk
- Mounting Type :
- Through Hole
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Collector Emitter Voltage (VCEO) :
- 50V
- Transistor Type :
- NPN
- Transistor Element Material :
- SILICON
- Datasheets
- JANTX2N2218A
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NPN -55°C~200°C TJ 10nA 1 Elements 3 Terminations SILICON NPN TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JANTX2N2218A Overview
In this device, the DC current gain is 40 @ 150mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 50mA, 500mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.250MHz is present in the transition frequency.Maximum collector currents can be below 800mA volts.
JANTX2N2218A Features
the DC current gain for this device is 40 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 250MHz
JANTX2N2218A Applications
There are a lot of Microsemi Corporation
JANTX2N2218A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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