JANSR2N2907AUB
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- Mfr.Part #
- JANSR2N2907AUB
- Manufacturer
- Microchip Technology
- Package / Case
- 3-SMD, No Lead
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.6A UB
- Stock
- 41,747
- In Stock ：
- 41,747
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- Power Dissipation :
- 500mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1mA 10V
- Mount :
- Surface Mount
- Published :
- 2007
- Polarity :
- PNP
- Collector Base Voltage (VCBO) :
- 60V
- Number of Pins :
- 3
- Package / Case :
- 3-SMD, No Lead
- Factory Lead Time :
- 33 Weeks
- Emitter Base Voltage (VEBO) :
- 5V
- Current - Collector Cutoff (Max) :
- 50nA
- Packaging :
- Tray
- RoHS Status :
- Non-RoHS Compliant
- Radiation Hardening :
- yes
- Max Collector Current :
- 600mA
- Min Operating Temperature :
- -65°C
- Vce Saturation (Max) @ Ib, Ic :
- 1.6V @ 50mA, 500mA
- Operating Temperature :
- -65°C~200°C TJ
- Transistor Type :
- PNP
- Series :
- Military, MIL-PRF-19500/291
- Mounting Type :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 60V
- Max Operating Temperature :
- 200°C
- Power - Max :
- 500mW
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 3 weeks ago)
- Current - Collector (Ic) (Max) :
- 600mA
- Voltage - Collector Emitter Breakdown (Max) :
- 60V
- Supplier Device Package :
- UB
- Max Power Dissipation :
- 500mW
- Datasheets
- JANSR2N2907AUB
PNP -65°C~200°C TJ 50nA 1 Elements 3-SMD, No Lead Tray Surface Mount
JANSR2N2907AUB Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 1mA 10V.When VCE saturation is 1.6V @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Supplier package UB contains the product.The device has a 60V maximal voltage - Collector Emitter Breakdown.A maximum collector current of 600mA volts can be achieved.
JANSR2N2907AUB Features
the DC current gain for this device is 100 @ 1mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
the supplier device package of UB
JANSR2N2907AUB Applications
There are a lot of Microsemi Corporation
JANSR2N2907AUB applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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