JANKCDR2N2907A
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- Mfr.Part #
- JANKCDR2N2907A
- Manufacturer
- Microchip Technology
- Package / Case
- TO-206AA, TO-18-3 Metal Can
- Datasheet
- Download
- Description
- SMALL-SIGNAL BJT
- Stock
- 18,999
- In Stock ：
- 18,999
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 1.6V @ 50mA, 500mA
- Frequency - Transition :
- -
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Series :
- Military, MIL-PRF-19500/291
- Transistor Type :
- PNP
- Current - Collector Cutoff (Max) :
- 50nA
- Supplier Device Package :
- TO-18 (TO-206AA)
- Voltage - Collector Emitter Breakdown (Max) :
- 60 V
- Package :
- Bulk
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA, 10V
- Package / Case :
- TO-206AA, TO-18-3 Metal Can
- Product Status :
- Active
- Power - Max :
- 500 mW
- Mounting Type :
- Through Hole
- Current - Collector (Ic) (Max) :
- 600 mA
- Datasheets
- JANKCDR2N2907A
PNP -65°C ~ 200°C (TJ) 50nA TO-206AA, TO-18-3 Metal Can Through Hole
JANKCDR2N2907A Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 150mA, 10V.When VCE saturation is 1.6V @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Supplier package TO-18 (TO-206AA) contains the product.The device has a 60 V maximal voltage - Collector Emitter Breakdown.
JANKCDR2N2907A Features
the DC current gain for this device is 100 @ 150mA, 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the supplier device package of TO-18 (TO-206AA)
JANKCDR2N2907A Applications
There are a lot of Microchip
JANKCDR2N2907A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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