JANKCDM2N5152
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- Mfr.Part #
- JANKCDM2N5152
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- RH POWER BJT
- Stock
- 14,833
- In Stock ：
- 14,833
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency - Transition :
- -
- Current - Collector (Ic) (Max) :
- 2 A
- Power - Max :
- 1 W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 2.5A, 5V
- Mounting Type :
- Through Hole
- Current - Collector Cutoff (Max) :
- 50μA
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Package :
- Bulk
- Product Status :
- Active
- Voltage - Collector Emitter Breakdown (Max) :
- 80 V
- Series :
- Military, MIL-PRF-19500/544
- Supplier Device Package :
- TO-39 (TO-205AD)
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 500mA, 5A
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Transistor Type :
- NPN
- Datasheets
- JANKCDM2N5152
NPN -65°C ~ 200°C (TJ) 50µA TO-205AD, TO-39-3 Metal Can Through Hole
JANKCDM2N5152 Overview
In this device, the DC current gain is 30 @ 2.5A, 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 500mA, 5A.Supplier device package TO-39 (TO-205AD) comes with the product.The device exhibits a collector-emitter breakdown at 80 V.
JANKCDM2N5152 Features
the DC current gain for this device is 30 @ 2.5A, 5V
the vce saturation(Max) is 1.5V @ 500mA, 5A
the supplier device package of TO-39 (TO-205AD)
JANKCDM2N5152 Applications
There are a lot of Microchip
JANKCDM2N5152 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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