JANKCCG2N3500
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- Mfr.Part #
- JANKCCG2N3500
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- RH SMALL-SIGNAL BJT
- Stock
- 38,297
- In Stock ：
- 38,297
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Manufacturer :
- Microchip
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Transistor Type :
- NPN
- Power - Max :
- 1 W
- Product Category :
- Microchip Technology
- Series :
- Military, MIL-PRF-19500/366
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Product Status :
- Active
- Brand :
- Microchip / Microsemi
- Voltage - Collector Emitter Breakdown (Max) :
- 150 V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA, 10V
- Current - Collector Cutoff (Max) :
- 10μA (ICBO)
- Frequency - Transition :
- -
- Current - Collector (Ic) (Max) :
- 300 mA
- Mounting Type :
- Through Hole
- Package :
- Bulk
- RoHS :
- N
- Supplier Device Package :
- TO-39 (TO-205AD)
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 15mA, 150mA
- Datasheets
- JANKCCG2N3500
NPN -65°C ~ 200°C (TJ) 10µA (ICBO) TO-205AD, TO-39-3 Metal Can Through Hole
JANKCCG2N3500 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 150mA, 10V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 15mA, 150mA.This product comes in a TO-39 (TO-205AD) device package from the supplier.Device displays Collector Emitter Breakdown (150 V maximal voltage).
JANKCCG2N3500 Features
the DC current gain for this device is 40 @ 150mA, 10V
the vce saturation(Max) is 400mV @ 15mA, 150mA
the supplier device package of TO-39 (TO-205AD)
JANKCCG2N3500 Applications
There are a lot of Microchip
JANKCCG2N3500 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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