JANKCBR2N2221A
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- Mfr.Part #
- JANKCBR2N2221A
- Manufacturer
- Microchip Technology
- Package / Case
- TO-206AA, TO-18-3 Metal Can
- Datasheet
- Download
- Description
- RH SMALL-SIGNAL BJT
- Stock
- 16,582
- In Stock ：
- 16,582
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA, 10V
- Max Frequency :
- 300 Hz
- Mounting Type :
- Through Hole
- Frequency - Transition :
- -
- Current - Collector Cutoff (Max) :
- 50nA
- Power - Max :
- 500 mW
- Supplier Device Package :
- TO-18 (TO-206AA)
- Voltage - Collector Emitter Breakdown (Max) :
- 50 V
- Product Status :
- Active
- Transistor Type :
- NPN
- Mounting :
- Panel
- Manufacturer :
- ABB
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Series :
- Military, MIL-PRF-19500/255
- Package / Case :
- TO-206AA, TO-18-3 Metal Can
- Current - Collector (Ic) (Max) :
- 800 mA
- Enclosure :
- R5
- Package :
- ACS800R5IP55
- IP Rating :
- IP55
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Datasheets
- JANKCBR2N2221A
NPN -65°C ~ 200°C (TJ) 50nA TO-206AA, TO-18-3 Metal Can Through Hole
JANKCBR2N2221A Overview
This device has a DC current gain of 40 @ 150mA, 10V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor comes in a supplier device package of TO-18 (TO-206AA).Detection of Collector Emitter Breakdown at 50 V maximal voltage is present.
JANKCBR2N2221A Features
the DC current gain for this device is 40 @ 150mA, 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
the supplier device package of TO-18 (TO-206AA)
JANKCBR2N2221A Applications
There are a lot of Microchip
JANKCBR2N2221A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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