JANKCBD2N3439
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- Mfr.Part #
- JANKCBD2N3439
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- RH POWER BJT
- Stock
- 43,450
- In Stock ：
- 43,450
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Series :
- Military, MIL-PRF-19500/368
- Transistor Type :
- NPN
- Operating Temperature :
- -55°C ~ 200°C
- Package :
- Bulk
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 20mA, 10V
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Mounting Type :
- Through Hole
- Product Status :
- Active
- Voltage - Collector Emitter Breakdown (Max) :
- 350 V
- Current - Collector (Ic) (Max) :
- 1 A
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 4mA, 50mA
- Supplier Device Package :
- TO-39 (TO-205AD)
- Current - Collector Cutoff (Max) :
- 2µA
- Power - Max :
- 800 mW
- Frequency - Transition :
- -
- Datasheets
- JANKCBD2N3439
NPN -55°C ~ 200°C 2µA TO-205AD, TO-39-3 Metal Can Through Hole
JANKCBD2N3439 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 20mA, 10V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 4mA, 50mA.The product comes in the supplier device package of TO-39 (TO-205AD).A 350 V maximal voltage - Collector Emitter Breakdown is present in the device.
JANKCBD2N3439 Features
the DC current gain for this device is 40 @ 20mA, 10V
the vce saturation(Max) is 500mV @ 4mA, 50mA
the supplier device package of TO-39 (TO-205AD)
JANKCBD2N3439 Applications
There are a lot of Microchip
JANKCBD2N3439 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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