JANKCB2N3440
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- Mfr.Part #
- JANKCB2N3440
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 250V 1A TO39
- Stock
- 15,630
- In Stock ：
- 15,630
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power - Max :
- 800 mW
- Manufacturer :
- Microchip
- Voltage - Collector Emitter Breakdown (Max) :
- 250 V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 4mA, 50mA
- RoHS :
- N
- Brand :
- Microchip / Microsemi
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Current - Collector Cutoff (Max) :
- 2µA
- Package :
- Tape and Reel (TR)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 20mA, 10V
- Packaging :
- Bulk
- Transistor Type :
- NPN
- Product Category :
- Bipolar Transistors - BJT
- Product Type :
- BJTs - Bipolar Transistors
- Subcategory :
- Transistors
- Supplier Device Package :
- TO-39 (TO-205AD)
- Series :
- Military, MIL-PRF-19500/368
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C ~ 200°C (TJ)
- Frequency - Transition :
- -
- Product Status :
- Active
- Current - Collector (Ic) (Max) :
- 1 A
- Datasheets
- JANKCB2N3440
NPN -55°C ~ 200°C (TJ) 2μA TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JANKCB2N3440 Overview
This device has a DC current gain of 40 @ 20mA, 10V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor comes in a supplier device package of TO-39 (TO-205AD).Detection of Collector Emitter Breakdown at 250 V maximal voltage is present.
JANKCB2N3440 Features
the DC current gain for this device is 40 @ 20mA, 10V
the vce saturation(Max) is 500mV @ 4mA, 50mA
the supplier device package of TO-39 (TO-205AD)
JANKCB2N3440 Applications
There are a lot of Microchip Technology
JANKCB2N3440 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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