JANHCA2N3637
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- Mfr.Part #
- JANHCA2N3637
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS PNP 175V 1A TO39
- Stock
- 14,352
- In Stock ：
- 14,352
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector (Ic) (Max) :
- 1 A
- Power - Max :
- 1 W
- Series :
- Military, MIL-PRF-19500/357
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 50mA
- Frequency - Transition :
- -
- Voltage - Collector Emitter Breakdown (Max) :
- 175 V
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 50mA, 10V
- Transistor Type :
- PNP
- Supplier Device Package :
- TO-39 (TO-205AD)
- Package :
- Tape and Reel (TR)
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Product Status :
- Active
- Current - Collector Cutoff (Max) :
- 10μA
- Mounting Type :
- Through Hole
- Datasheets
- JANHCA2N3637
PNP -65°C ~ 200°C (TJ) 10µA TO-205AD, TO-39-3 Metal Can Through Hole
JANHCA2N3637 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 50mA, 10V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 5mA, 50mA.The product comes in the supplier device package of TO-39 (TO-205AD).A 175 V maximal voltage - Collector Emitter Breakdown is present in the device.
JANHCA2N3637 Features
the DC current gain for this device is 100 @ 50mA, 10V
the vce saturation(Max) is 600mV @ 5mA, 50mA
the supplier device package of TO-39 (TO-205AD)
JANHCA2N3637 Applications
There are a lot of Microchip
JANHCA2N3637 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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