JAN2N6383
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- Mfr.Part #
- JAN2N6383
- Manufacturer
- Microchip Technology
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 40V 10A TO204AA
- Stock
- 34,266
- In Stock ：
- 34,266
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mount :
- Through Hole
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 4 weeks ago)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- Pbfree Code :
- No
- Operating Temperature :
- -55°C~175°C TJ
- Current - Collector (Ic) (Max) :
- 10A
- Contact Plating :
- Lead, Tin
- Polarity :
- NPN
- Package / Case :
- TO-204AA, TO-3
- Collector Base Voltage (VCBO) :
- 40V
- Qualification Status :
- Qualified
- Collector Emitter Voltage (VCEO) :
- 40V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 5A 3V
- Transistor Type :
- NPN - Darlington
- JESD-609 Code :
- e0
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Packaging :
- Bulk
- Element Configuration :
- Single
- Collector Emitter Saturation Voltage :
- 2V
- Power - Max :
- 6W
- Emitter Base Voltage (VEBO) :
- 5V
- Case Connection :
- COLLECTOR
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Elements :
- 1
- JESD-30 Code :
- O-MBFM-P2
- Terminal Form :
- PIN/PEG
- Published :
- 2002
- Current - Collector Cutoff (Max) :
- 1mA
- Pin Count :
- 2
- RoHS Status :
- Non-RoHS Compliant
- Transistor Element Material :
- SILICON
- Terminal Position :
- BOTTOM
- Factory Lead Time :
- 22 Weeks
- Series :
- Military, MIL-PRF-19500/523
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 100mA, 10A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Terminations :
- 2
- Datasheets
- JAN2N6383
NPN - Darlington -55°C~175°C TJ 1mA 1 Elements 2 Terminations SILICON TO-204AA, TO-3 Bulk Surface Mount
JAN2N6383 Overview
This device has a DC current gain of 1000 @ 5A 3V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 2V.A VCE saturation (Max) of 3V @ 100mA, 10A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.
JAN2N6383 Features
the DC current gain for this device is 1000 @ 5A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 100mA, 10A
the emitter base voltage is kept at 5V
JAN2N6383 Applications
There are a lot of Microsemi Corporation
JAN2N6383 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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