JAN2N6287
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- Mfr.Part #
- JAN2N6287
- Manufacturer
- Microchip Technology
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 100V 20A TO204AA
- Stock
- 22,270
- In Stock ：
- 22,270
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Mounting Type :
- Through Hole
- Package / Case :
- TO-204AA, TO-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- PIN/PEG
- Current - Collector Cutoff (Max) :
- 1mA
- Polarity :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 200mA, 20A
- Case Connection :
- COLLECTOR
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Emitter Base Voltage (VEBO) :
- 7V
- Collector Emitter Saturation Voltage :
- 3V
- Pbfree Code :
- No
- Published :
- 2002
- Terminal Position :
- BOTTOM
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Qualification Status :
- Qualified
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 4 weeks ago)
- Collector Emitter Voltage (VCEO) :
- 100V
- Factory Lead Time :
- 22 Weeks
- JESD-30 Code :
- O-MBFM-P2
- Series :
- Military, MIL-PRF-19500/505
- JESD-609 Code :
- e0
- Transition Frequency :
- 4MHz
- Transistor Type :
- PNP - Darlington
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1250 @ 10A 3V
- Collector Base Voltage (VCBO) :
- 100V
- Element Configuration :
- Single
- Packaging :
- Bulk
- Pin Count :
- 2
- Operating Temperature :
- -65°C~175°C TJ
- Contact Plating :
- Lead, Tin
- Current - Collector (Ic) (Max) :
- 20A
- RoHS Status :
- Non-RoHS Compliant
- Mount :
- Through Hole
- Number of Terminations :
- 2
- ECCN Code :
- EAR99
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Power - Max :
- 175W
- Datasheets
- JAN2N6287
PNP - Darlington -65°C~175°C TJ 1mA 1 Elements 2 Terminations SILICON TO-204AA, TO-3 Bulk Through Hole
JAN2N6287 Overview
In this device, the DC current gain is 1250 @ 10A 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 3V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 3V @ 200mA, 20A.Keeping the emitter base voltage at 7V allows for a high level of efficiency.4MHz is present in the transition frequency.
JAN2N6287 Features
the DC current gain for this device is 1250 @ 10A 3V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 200mA, 20A
the emitter base voltage is kept at 7V
a transition frequency of 4MHz
JAN2N6287 Applications
There are a lot of Microsemi Corporation
JAN2N6287 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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