JAN2N5667
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- Mfr.Part #
- JAN2N5667
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 300V 5A TO5
- Stock
- 1,904
- In Stock ：
- 1,904
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 1.2W
- Qualification Status :
- Qualified
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 400V
- Pin Count :
- 2
- Series :
- Military, MIL-PRF-19500/455
- Power Dissipation :
- 1.2W
- RoHS Status :
- Non-RoHS Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 1A, 5A
- Current - Collector Cutoff (Max) :
- 200nA
- JESD-609 Code :
- e0
- Collector Emitter Voltage (VCEO) :
- 300V
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Packaging :
- Bulk
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- Configuration :
- Single
- Transistor Application :
- SWITCHING
- JESD-30 Code :
- O-MBFM-P2
- Max Collector Current :
- 5A
- Number of Terminations :
- 2
- Number of Elements :
- 1
- Polarity/Channel Type :
- NPN
- Transistor Type :
- NPN
- Published :
- 2007
- Number of Pins :
- 3
- Factory Lead Time :
- 22 Weeks
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 3 weeks ago)
- Mount :
- Through Hole
- ECCN Code :
- EAR99
- Operating Temperature :
- -65°C~200°C TJ
- Mounting Type :
- Through Hole
- Pbfree Code :
- No
- Emitter Base Voltage (VEBO) :
- 6V
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 1A 5V
- Terminal Position :
- BOTTOM
- Case Connection :
- COLLECTOR
- Terminal Form :
- PIN/PEG
- Radiation Hardening :
- No
- Datasheets
- JAN2N5667
NPN -65°C~200°C TJ 200nA 1 Elements 2 Terminations SILICON NPN TO-205AA, TO-5-3 Metal Can Bulk Through Hole
JAN2N5667 Overview
This device has a DC current gain of 25 @ 1A 5V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 6V to achieve high efficiency.The maximum collector current is 5A volts.
JAN2N5667 Features
the DC current gain for this device is 25 @ 1A 5V
the vce saturation(Max) is 1V @ 1A, 5A
the emitter base voltage is kept at 6V
JAN2N5667 Applications
There are a lot of Microsemi Corporation
JAN2N5667 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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