JAN2N5582
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- Mfr.Part #
- JAN2N5582
- Manufacturer
- Microchip Technology
- Package / Case
- TO-206AB, TO-46-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.8A TO46-3
- Stock
- 16,268
- In Stock ：
- 16,268
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Power - Max :
- 500mW
- Collector Base Voltage (VCBO) :
- 75V
- Qualification Status :
- Qualified
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- Military, MIL-PRF-19500/423
- Operating Temperature :
- -55°C~200°C TJ
- Factory Lead Time :
- 23 Weeks
- Collector Emitter Breakdown Voltage :
- 50V
- JESD-30 Code :
- O-MBCY-W3
- Reference Standard :
- MIL-19500/423E
- Number of Elements :
- 1
- Polarity/Channel Type :
- NPN
- Configuration :
- Single
- Terminal Form :
- Wire
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Max Collector Current :
- 800mA
- Package / Case :
- TO-206AB, TO-46-3 Metal Can
- Max Power Dissipation :
- 500mW
- Terminal Position :
- BOTTOM
- Mounting Type :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- RoHS Status :
- Non-RoHS Compliant
- HTS Code :
- 8541.21.00.95
- Transistor Application :
- SWITCHING
- Case Connection :
- COLLECTOR
- Pin Count :
- 3
- Packaging :
- Bulk
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 3 weeks ago)
- Number of Terminations :
- 3
- Pbfree Code :
- No
- Contact Plating :
- Lead, Tin
- Collector Emitter Voltage (VCEO) :
- 1V
- Mount :
- Through Hole
- Turn Off Time-Max (toff) :
- 300ns
- Published :
- 2002
- Transistor Element Material :
- SILICON
- Transistor Type :
- NPN
- JESD-609 Code :
- e0
- Turn On Time-Max (ton) :
- 35ns
- Datasheets
- JAN2N5582
NPN -55°C~200°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-206AB, TO-46-3 Metal Can Bulk Through Hole
JAN2N5582 Overview
In this device, the DC current gain is 100 @ 150mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 50mA, 500mA.Maximum collector currents can be below 800mA volts.
JAN2N5582 Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
JAN2N5582 Applications
There are a lot of Microsemi Corporation
JAN2N5582 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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Shipping CostShipping Cost starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).If customer have shipping account, we can make shipment under customer’s shipping account with freight collect directly.
The basic freight (for package ≤0.5 KG ) depends on the time zones and countries
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose. You can track it by the tracking no.
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