JAN2N5157
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- Mfr.Part #
- JAN2N5157
- Manufacturer
- Microchip Technology
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS NPN 500V 3.5A TO204AA
- Stock
- 17,522
- In Stock ：
- 17,522
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Through Hole
- Current - Collector Cutoff (Max) :
- 250μA
- Number of Terminations :
- 2
- Collector Base Voltage (VCBO) :
- 700V
- Configuration :
- Single
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 5W
- Transistor Type :
- NPN
- RoHS Status :
- Non-RoHS Compliant
- Packaging :
- Bulk
- Collector Emitter Voltage (VCEO) :
- 500V
- Case Connection :
- COLLECTOR
- Power Dissipation :
- 5W
- Max Collector Current :
- 3.5A
- Transistor Application :
- SWITCHING
- Terminal Position :
- BOTTOM
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- No
- Number of Pins :
- 3
- Package / Case :
- TO-204AA, TO-3
- Pin Count :
- 2
- Mount :
- Through Hole
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 3 weeks ago)
- Published :
- 2001
- JESD-30 Code :
- O-MBFM-P2
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Emitter Base Voltage (VEBO) :
- 6V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 1A 5V
- JESD-609 Code :
- e0
- Radiation Hardening :
- No
- Factory Lead Time :
- 22 Weeks
- Operating Temperature :
- -65°C~200°C TJ
- Polarity/Channel Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 700mA, 3.5A
- Number of Elements :
- 1
- Qualification Status :
- Qualified
- Terminal Form :
- PIN/PEG
- Series :
- Military, MIL-PRF-19500/371
- Datasheets
- JAN2N5157
NPN -65°C~200°C TJ 250μA 1 Elements 2 Terminations SILICON NPN TO-204AA, TO-3 Bulk Through Hole
JAN2N5157 Overview
In this device, the DC current gain is 30 @ 1A 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 2.5V @ 700mA, 3.5A.With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor is possible for the collector current to fall as low as 3.5A volts at Single BJT transistors maximum.
JAN2N5157 Features
the DC current gain for this device is 30 @ 1A 5V
the vce saturation(Max) is 2.5V @ 700mA, 3.5A
the emitter base voltage is kept at 6V
JAN2N5157 Applications
There are a lot of Microsemi Corporation
JAN2N5157 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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