JAN2N4236
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- Mfr.Part #
- JAN2N4236
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS PNP 80V 1A TO39
- Stock
- 48,798
- In Stock ：
- 48,798
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- -65°C~200°C TJ
- Mounting Type :
- Through Hole
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Transistor Application :
- AMPLIFIER
- RoHS Status :
- Non-RoHS Compliant
- Transistor Type :
- PNP
- Factory Lead Time :
- 22 Weeks
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Series :
- Military, MIL-PRF-19500/580
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 250mA 1V
- Pbfree Code :
- No
- Qualification Status :
- Qualified
- JESD-609 Code :
- e0
- Published :
- 2007
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Terminal Form :
- Wire
- Collector Base Voltage (VCBO) :
- 80V
- Number of Pins :
- 3
- Collector Emitter Voltage (VCEO) :
- 80V
- Power Dissipation :
- 1W
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Emitter Base Voltage (VEBO) :
- 7V
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 100mA, 1A
- Terminal Position :
- BOTTOM
- Current - Collector Cutoff (Max) :
- 1mA
- Mount :
- Through Hole
- Max Power Dissipation :
- 1W
- Packaging :
- Bulk
- Number of Elements :
- 1
- Max Collector Current :
- 1A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity :
- NPN
- Configuration :
- Single
- Datasheets
- JAN2N4236
PNP -65°C~200°C TJ 1mA 1 Elements 3 Terminations SILICON TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JAN2N4236 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 30 @ 250mA 1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 100mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.During maximum operation, collector current can be as low as 1A volts.
JAN2N4236 Features
the DC current gain for this device is 30 @ 250mA 1V
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 7V
JAN2N4236 Applications
There are a lot of Microsemi Corporation
JAN2N4236 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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