JAN2N4234
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- Mfr.Part #
- JAN2N4234
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS PNP 40V 1A TO39
- Stock
- 3,358
- In Stock ：
- 3,358
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Through Hole
- Operating Temperature :
- -65°C~200°C TJ
- Transistor Application :
- AMPLIFIER
- Qualification Status :
- Qualified
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 250mA 1V
- Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 40V
- Transistor Element Material :
- SILICON
- Series :
- Military, MIL-PRF-19500/580
- Collector Emitter Voltage (VCEO) :
- 40V
- Current - Collector Cutoff (Max) :
- 1mA
- Power Dissipation :
- 1W
- Number of Terminations :
- 3
- RoHS Status :
- Non-RoHS Compliant
- ECCN Code :
- EAR99
- Max Collector Current :
- 1A
- Emitter Base Voltage (VEBO) :
- 7V
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Mount :
- Through Hole
- Pbfree Code :
- No
- JESD-609 Code :
- e0
- Polarity :
- NPN
- Number of Pins :
- 3
- Published :
- 2007
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 100mA, 1A
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Terminal Position :
- BOTTOM
- Radiation Hardening :
- No
- Factory Lead Time :
- 22 Weeks
- Transistor Type :
- PNP
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Packaging :
- Bulk
- Max Power Dissipation :
- 1W
- Terminal Form :
- Wire
- Datasheets
- JAN2N4234
PNP -65°C~200°C TJ 1mA 1 Elements 3 Terminations SILICON TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JAN2N4234 Overview
In this device, the DC current gain is 30 @ 250mA 1V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 100mA, 1A.With the emitter base voltage set at 7V, an efficient operation can be achieved.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
JAN2N4234 Features
the DC current gain for this device is 30 @ 250mA 1V
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 7V
JAN2N4234 Applications
There are a lot of Microsemi Corporation
JAN2N4234 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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