JAN2N3999
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- Mfr.Part #
- JAN2N3999
- Manufacturer
- Microchip Technology
- Package / Case
- TO-210AA, TO-59-4, Stud
- Datasheet
- Download
- Description
- TRANS NPN 80V 10A TO59
- Stock
- 17,530
- In Stock ：
- 17,530
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-609 Code :
- e0
- Collector Emitter Voltage (VCEO) :
- 80V
- Number of Elements :
- 1
- Package / Case :
- TO-210AA, TO-59-4, Stud
- Current - Collector (Ic) (Max) :
- 10A
- Pin Count :
- 4
- Series :
- Military, MIL-PRF-19500/374
- Emitter Base Voltage (VEBO) :
- 8V
- Pbfree Code :
- No
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -65°C~200°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 1A 2V
- RoHS Status :
- Non-RoHS Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 500mA, 5A
- Polarity/Channel Type :
- NPN
- Transistor Application :
- SWITCHING
- Qualification Status :
- Qualified
- JESD-30 Code :
- O-MUPM-X3
- Radiation Hardening :
- No
- Collector Base Voltage (VCBO) :
- 100V
- Case Connection :
- COLLECTOR
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 10μA
- Packaging :
- Bulk
- Terminal Form :
- UNSPECIFIED
- Mount :
- Stud
- Terminal Position :
- UPPER
- Number of Pins :
- 4
- Mounting Type :
- Stud Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2007
- Max Collector Current :
- 5A
- Factory Lead Time :
- 22 Weeks
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Transistor Type :
- NPN
- Max Power Dissipation :
- 2W
- Configuration :
- Single
- Power Dissipation :
- 2W
- Datasheets
- JAN2N3999
NPN -65°C~200°C TJ 10μA 1 Elements 3 Terminations SILICON NPN TO-210AA, TO-59-4, Stud Bulk Stud Mount
JAN2N3999 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 80 @ 1A 2V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 8V can result in a high level of efficiency.When collector current reaches its maximum, it can reach 5A volts.
JAN2N3999 Features
the DC current gain for this device is 80 @ 1A 2V
the vce saturation(Max) is 2V @ 500mA, 5A
the emitter base voltage is kept at 8V
JAN2N3999 Applications
There are a lot of Microsemi Corporation
JAN2N3999 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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