JAN2N3762L
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- Mfr.Part #
- JAN2N3762L
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- NPN TRANSISTOR
- Stock
- 28,199
- In Stock ：
- 28,199
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 900mV @ 100mA, 1A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 500mA, 1V
- Operating Temperature :
- -55°C ~ 200°C (TJ)
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- Current - Collector Cutoff (Max) :
- 100µA (ICBO)
- Power - Max :
- 1 W
- Supplier Device Package :
- TO-5
- Voltage - Collector Emitter Breakdown (Max) :
- 40 V
- Product Status :
- Active
- Frequency - Transition :
- -
- Current - Collector (Ic) (Max) :
- 1.5 A
- Series :
- Military, MIL-PRF-19500/396
- Package :
- Bulk
- Mounting Type :
- Through Hole
- Transistor Type :
- PNP
- Datasheets
- JAN2N3762L
PNP -55°C ~ 200°C (TJ) 100µA (ICBO) TO-205AA, TO-5-3 Metal Can Through Hole
JAN2N3762L Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 500mA, 1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 900mV @ 100mA, 1A.TO-5 is the supplier device package for this product.This device displays a 40 V maximum voltage - Collector Emitter Breakdown.
JAN2N3762L Features
the DC current gain for this device is 40 @ 500mA, 1V
the vce saturation(Max) is 900mV @ 100mA, 1A
the supplier device package of TO-5
JAN2N3762L Applications
There are a lot of Microchip
JAN2N3762L applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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