JAN2N3749
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- Mfr.Part #
- JAN2N3749
- Manufacturer
- Microchip Technology
- Package / Case
- TO-111-4, Stud
- Datasheet
- Download
- Description
- TRANS NPN 80V 5A TO111
- Stock
- 19,614
- In Stock ：
- 19,614
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Bulk
- Max Collector Current :
- 5A
- Terminal Form :
- UNSPECIFIED
- Current - Collector (Ic) (Max) :
- 5A
- Polarity/Channel Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 500mA, 5A
- Pbfree Code :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 1A 2V
- Operating Temperature :
- -65°C~200°C TJ
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 20μA
- Collector Emitter Voltage (VCEO) :
- 80V
- Transistor Element Material :
- SILICON
- HTS Code :
- 8541.29.00.95
- Number of Terminations :
- 3
- Terminal Position :
- UPPER
- Transistor Type :
- NPN
- Series :
- Military, MIL-PRF-19500/315
- Configuration :
- Single
- JESD-609 Code :
- e0
- RoHS Status :
- Non-RoHS Compliant
- JEDEC-95 Code :
- TO-59
- Factory Lead Time :
- 22 Weeks
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Published :
- 2007
- Mount :
- Stud
- Collector Base Voltage (VCBO) :
- 110V
- Qualification Status :
- Qualified
- Radiation Hardening :
- No
- Mounting Type :
- Through Hole
- Package / Case :
- TO-111-4, Stud
- Max Power Dissipation :
- 2W
- Case Connection :
- Isolated
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Datasheets
- JAN2N3749
NPN -65°C~200°C TJ 20μA 1 Elements 3 Terminations SILICON PNP TO-111-4, Stud Bulk Through Hole
JAN2N3749 Overview
In this device, the DC current gain is 40 @ 1A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 500mA, 5A.Maximum collector currents can be below 5A volts.
JAN2N3749 Features
the DC current gain for this device is 40 @ 1A 2V
the vce saturation(Max) is 1.5V @ 500mA, 5A
JAN2N3749 Applications
There are a lot of Microsemi Corporation
JAN2N3749 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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