JAN2N3506AL
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- Mfr.Part #
- JAN2N3506AL
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 40V 3A TO5
- Stock
- 12,489
- In Stock ：
- 12,489
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- NPN
- Power Dissipation :
- 1W
- Max Power Dissipation :
- 1W
- Collector Emitter Voltage (VCEO) :
- 40V
- Case Connection :
- COLLECTOR
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Number of Pins :
- 3
- Max Collector Current :
- 3A
- Transistor Type :
- NPN
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- Mounting Type :
- Through Hole
- Terminal Position :
- BOTTOM
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Base Voltage (VCBO) :
- 60V
- Number of Elements :
- 1
- JESD-609 Code :
- e0
- Qualification Status :
- Qualified
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 250mA, 2.5A
- Operating Temperature :
- -65°C~200°C TJ
- Published :
- 2007
- Mount :
- Through Hole
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- Packaging :
- Bulk
- RoHS Status :
- Non-RoHS Compliant
- Factory Lead Time :
- 22 Weeks
- Turn Off Time-Max (toff) :
- 90ns
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 1.5A 2V
- Terminal Finish :
- TIN LEAD
- Configuration :
- Single
- Turn On Time-Max (ton) :
- 45ns
- Transistor Application :
- SWITCHING
- Series :
- Military, MIL-PRF-19500/349
- Terminal Form :
- Wire
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Datasheets
- JAN2N3506AL
NPN -65°C~200°C TJ 1 Elements 3 Terminations SILICON NPN TO-205AA, TO-5-3 Metal Can Bulk Through Hole
JAN2N3506AL Overview
In this device, the DC current gain is 40 @ 1.5A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 250mA, 2.5A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.Maximum collector currents can be below 3A volts.
JAN2N3506AL Features
the DC current gain for this device is 40 @ 1.5A 2V
the vce saturation(Max) is 1.5V @ 250mA, 2.5A
the emitter base voltage is kept at 5V
JAN2N3506AL Applications
There are a lot of Microsemi Corporation
JAN2N3506AL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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