JAN2N3439L
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- Mfr.Part #
- JAN2N3439L
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 350V 1A TO5
- Stock
- 1,439
- In Stock ：
- 1,439
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Radiation Hardening :
- No
- Max Power Dissipation :
- 800mW
- Case Connection :
- COLLECTOR
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Qualification Status :
- Qualified
- Terminal Form :
- Wire
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- Collector Emitter Voltage (VCEO) :
- 350V
- Max Collector Current :
- 1A
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 450V
- Pbfree Code :
- No
- JESD-609 Code :
- e0
- Packaging :
- Bulk
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 3 weeks ago)
- Number of Pins :
- 3
- Power Dissipation :
- 800mW
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 4mA, 50mA
- Number of Terminations :
- 3
- RoHS Status :
- Non-RoHS Compliant
- Mounting Type :
- Through Hole
- Terminal Position :
- BOTTOM
- Series :
- Military, MIL-PRF-19500/368
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 20mA 10V
- Transistor Type :
- NPN
- Polarity/Channel Type :
- NPN
- Factory Lead Time :
- 22 Weeks
- Published :
- 2007
- Collector Emitter Breakdown Voltage :
- 350V
- Pin Count :
- 3
- Operating Temperature :
- -65°C~200°C TJ
- Emitter Base Voltage (VEBO) :
- 7V
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Mount :
- Through Hole
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 2µA
- Configuration :
- Single
- Datasheets
- JAN2N3439L
NPN -65°C~200°C TJ 2μA 1 Elements 3 Terminations SILICON NPN TO-205AA, TO-5-3 Metal Can Bulk Through Hole
JAN2N3439L Overview
In this device, the DC current gain is 40 @ 20mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 4mA, 50mA.Keeping the emitter base voltage at 7V allows for a high level of efficiency.Maximum collector currents can be below 1A volts.
JAN2N3439L Features
the DC current gain for this device is 40 @ 20mA 10V
the vce saturation(Max) is 500mV @ 4mA, 50mA
the emitter base voltage is kept at 7V
JAN2N3439L Applications
There are a lot of Microsemi Corporation
JAN2N3439L applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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