JAN2N3419S
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- Mfr.Part #
- JAN2N3419S
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 80V 3A TO39
- Stock
- 32,014
- In Stock ：
- 32,014
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Factory Lead Time :
- 22 Weeks
- Terminal Position :
- BOTTOM
- Packaging :
- Bulk
- Max Power Dissipation :
- 1W
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 2A
- Configuration :
- Single
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -65°C~200°C TJ
- Transistor Type :
- NPN
- Current - Collector (Ic) (Max) :
- 3A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 1A 2V
- Polarity/Channel Type :
- NPN
- Published :
- 2007
- Series :
- Military, MIL-PRF-19500/393
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- JESD-609 Code :
- e0
- Number of Elements :
- 1
- Qualification Status :
- Qualified
- RoHS Status :
- Non-RoHS Compliant
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Pbfree Code :
- No
- Number of Pins :
- 3
- Collector Emitter Voltage (VCEO) :
- 80V
- Pin Count :
- 2
- Mounting Type :
- Through Hole
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 3A
- Collector Base Voltage (VCBO) :
- 125V
- Current - Collector Cutoff (Max) :
- 5μA
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Terminal Form :
- Wire
- Number of Terminations :
- 3
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- HTS Code :
- 8541.29.00.95
- Case Connection :
- COLLECTOR
- Mount :
- Through Hole
- ECCN Code :
- EAR99
- Datasheets
- JAN2N3419S
NPN -65°C~200°C TJ 5μA 1 Elements 3 Terminations SILICON NPN TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JAN2N3419S Overview
This device has a DC current gain of 20 @ 1A 2V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The maximum collector current is 3A volts.
JAN2N3419S Features
the DC current gain for this device is 20 @ 1A 2V
the vce saturation(Max) is 500mV @ 200mA, 2A
JAN2N3419S Applications
There are a lot of Microsemi Corporation
JAN2N3419S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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