JAN2N2907AL
- Mfr.Part #
- JAN2N2907AL
- Manufacturer
- Microchip Technology
- Package / Case
- 4-SMD, No Lead
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.6A UA
- Stock
- 10,613
- In Stock :
- 10,613
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 60V
- Terminal Position :
- BOTTOM
- JEDEC-95 Code :
- TO-206AA
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Factory Lead Time :
- 18 Weeks
- Pbfree Code :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Configuration :
- Single
- Operating Temperature :
- -65°C~200°C TJ
- JESD-609 Code :
- e0
- HTS Code :
- 8541.21.00.95
- Power - Max :
- 500mW
- Number of Terminations :
- 3
- Published :
- 2007
- ECCN Code :
- EAR99
- Qualification Status :
- Qualified
- Package / Case :
- 4-SMD, No Lead
- Packaging :
- Bulk
- Terminal Form :
- Wire
- Max Collector Current :
- 600mA
- Current - Collector Cutoff (Max) :
- 50nA
- Transistor Type :
- PNP
- Collector Emitter Voltage (VCEO) :
- 1.6V
- Mounting Type :
- Surface Mount
- Series :
- Military, MIL-PRF-19500/291
- Vce Saturation (Max) @ Ib, Ic :
- 1.6V @ 50mA, 500mA
- Polarity/Channel Type :
- PNP
- Max Power Dissipation :
- 500mW
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Number of Pins :
- 3
- Mount :
- Surface Mount, Through Hole
- Turn On Time-Max (ton) :
- 45ns
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 60V
- Pin Count :
- 3
- Case Connection :
- COLLECTOR
- RoHS Status :
- Non-RoHS Compliant
- Reference Standard :
- MIL-19500/291
- Datasheets
- JAN2N2907AL
PNP -65°C~200°C TJ 50nA 1 Elements 3 Terminations SILICON PNP 4-SMD, No Lead Bulk Surface Mount
JAN2N2907AL Overview
In this device, the DC current gain is 100 @ 150mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.6V @ 50mA, 500mA.Maximum collector currents can be below 600mA volts.
JAN2N2907AL Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
JAN2N2907AL Applications
There are a lot of Microsemi Corporation
JAN2N2907AL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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