JAN2N2906AUA

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Mfr.Part #
JAN2N2906AUA
Manufacturer
Microchip Technology
Package / Case
4-SMD, No Lead
Datasheet
Download
Description
TRANS PNP 60V 0.6A 4SMD
Stock
4,894
In Stock :
4,894

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Manufacturer :
Microchip Technology
Product Category :
Transistors - Bipolar (BJT) - Single
Operating Temperature :
-65°C~200°C TJ
Current - Collector (Ic) (Max) :
600mA
Package / Case :
4-SMD, No Lead
Max Power Dissipation :
400mW
Max Collector Current :
600mA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vce Saturation (Max) @ Ib, Ic :
1.6V @ 50mA, 500mA
RoHS Status :
Non-RoHS Compliant
Supplier Device Package :
4-SMD
Transistor Type :
PNP
Max Operating Temperature :
200°C
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 150mA 10V
Collector Emitter Voltage (VCEO) :
60V
Factory Lead Time :
23 Weeks
Mounting Type :
Surface Mount
Current - Collector Cutoff (Max) :
50nA
Radiation Hardening :
No
Voltage - Collector Emitter Breakdown (Max) :
60V
Collector Base Voltage (VCBO) :
60V
Min Operating Temperature :
-65°C
Series :
Military, MIL-PRF-19500/291
Packaging :
Bulk
Number of Pins :
4
Mount :
Surface Mount
Lifecycle Status :
IN PRODUCTION (Last Updated: 3 weeks ago)
Power - Max :
500mW
Published :
2007
Datasheets
JAN2N2906AUA
Introducing Transistors - Bipolar (BJT) - Single Microchip Technology JAN2N2906AUA from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-65°C~200°C TJ, Package / Case:4-SMD, No Lead, Mounting Type:Surface Mount, Number of Pins:4, JAN2N2906AUA pinout, JAN2N2906AUA datasheet PDF, JAN2N2906AUA amp .Beyond Transistors - Bipolar (BJT) - Single Microchip Technology JAN2N2906AUA ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.



PNP -65°C~200°C TJ 50nA 4-SMD, No Lead Bulk Surface Mount

JAN2N2906AUA Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 150mA 10V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.6V @ 50mA, 500mA.This product comes in a 4-SMD device package from the supplier.Device displays Collector Emitter Breakdown (60V maximal voltage).Single BJT transistor is possible to have a collector current as low as 600mA volts at Single BJT transistors maximum.

JAN2N2906AUA Features


the DC current gain for this device is 40 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the supplier device package of 4-SMD


JAN2N2906AUA Applications


There are a lot of Microsemi Corporation
JAN2N2906AUA applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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