JAN2N2605
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- Mfr.Part #
- JAN2N2605
- Manufacturer
- Microchip Technology
- Package / Case
- TO-206AB, TO-46-3 Metal Can
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.03A TO46-3
- Stock
- 39,888
- In Stock ：
- 39,888
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Factory Lead Time :
- 23 Weeks
- Emitter Base Voltage (VEBO) :
- 6V
- Collector Base Voltage (VCBO) :
- 70V
- Current - Collector Cutoff (Max) :
- 10nA
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- RoHS Status :
- Non-RoHS Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 500μA, 10mA
- JESD-609 Code :
- e0
- Terminal Form :
- Wire
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Transistor Application :
- AMPLIFIER
- Qualification Status :
- Qualified
- Collector Emitter Voltage (VCEO) :
- 60V
- Case Connection :
- COLLECTOR
- Series :
- Military, MIL-PRF-19500/354
- Operating Temperature :
- -65°C~200°C TJ
- Max Collector Current :
- 30mA
- Terminal Position :
- BOTTOM
- Pbfree Code :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 5V
- Package / Case :
- TO-206AB, TO-46-3 Metal Can
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Configuration :
- Single
- Polarity/Channel Type :
- PNP
- Power Dissipation :
- 400mW
- Mounting Type :
- Through Hole
- Pin Count :
- 3
- Mount :
- Through Hole
- Packaging :
- Bulk
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Collector Emitter Breakdown Voltage :
- 60V
- Max Power Dissipation :
- 400mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- PNP
- Published :
- 2007
- Datasheets
- JAN2N2605
PNP -65°C~200°C TJ 10nA 1 Elements 3 Terminations SILICON PNP TO-206AB, TO-46-3 Metal Can Bulk Through Hole
JAN2N2605 Overview
In this device, the DC current gain is 100 @ 10mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 500μA, 10mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.Maximum collector currents can be below 30mA volts.
JAN2N2605 Features
the DC current gain for this device is 100 @ 10mA 5V
the vce saturation(Max) is 300mV @ 500μA, 10mA
the emitter base voltage is kept at 6V
JAN2N2605 Applications
There are a lot of Microsemi Corporation
JAN2N2605 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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