J112-D27Z

Manufacturer :

onsemi

Product Category :

Transistors - JFETs

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

35V

FET Type :

N-Channel

Power Dissipation :

625mW

Lead Free :

Lead Free

Continuous Drain Current (ID) :

5mA

Number of Elements :

1

Base Part Number :

J112

Voltage - Cutoff (VGS off) @ Id :

1V @ 1μA

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

Terminal Position :

BOTTOM

Max Power Dissipation :

625mW

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Operating Mode :

Depletion Mode

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Feedback Cap-Max (Crss) :

5 pF

Voltage - Rated DC :

35V

Transistor Application :

SWITCHING

Current - Drain (Idss) @ Vds (Vgs=0) :

5mA @ 15V

Pbfree Code :

yes

Qualification Status :

Not Qualified

Resistance - RDS(On) :

50Ohm

Published :

2006

Current Rating :

50mA

Factory Lead Time :

6 Weeks

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

FET Technology :

JUNCTION

Packaging :

Tape and Reel (TR)

Weight :

201mg

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Single

Drain to Source Resistance :

50Ohm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mount :

Through Hole

Gate to Source Voltage (Vgs) :

-35V