J112-D26Z

Manufacturer :

onsemi

Product Category :

Transistors - JFETs

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2006

Max Power Dissipation :

625mW

Weight :

200.998119mg

Power Dissipation :

625mW

Drain to Source Voltage (Vdss) :

35V

Mount :

Surface Mount, Through Hole

Gate to Source Voltage (Vgs) :

-35V

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Mounting Type :

Through Hole

Resistance - RDS(On) :

50Ohm

RoHS Status :

ROHS3 Compliant

Operating Mode :

Depletion Mode

FET Type :

N-Channel

Lead Free :

Lead Free

Voltage :

35V

Number of Terminations :

3

Current :

5A

Base Part Number :

J112

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Element Configuration :

Single

REACH SVHC :

No SVHC

Number of Pins :

3

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Feedback Cap-Max (Crss) :

5 pF

Voltage - Cutoff (VGS off) @ Id :

1V @ 1μA

Factory Lead Time :

7 Weeks

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Terminal Position :

BOTTOM

Radiation Hardening :

No

Voltage - Rated DC :

35V

Continuous Drain Current (ID) :

5mA

Drain to Source Resistance :

50Ohm

Input Capacitance :

7pF

Pbfree Code :

yes

Current - Drain (Idss) @ Vds (Vgs=0) :

5mA @ 15V

Current Rating :

50mA

FET Technology :

JUNCTION