IXUC200N055

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Mfr.Part #
IXUC200N055
Manufacturer
Littelfuse
Package / Case
ISOPLUS220™
Datasheet
Download
Description
MOSFET N-CH 55V 200A ISOPLUS220
Stock
7,774
In Stock :
7,774

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
JESD-30 Code :
R-PSIP-T3
Terminal Form :
THROUGH-HOLE
Avalanche Energy Rating (Eas) :
500 mJ
JESD-609 Code :
e3
Packaging :
Tube
Drive Voltage (Max Rds On,Min Rds On) :
10V
Gate to Source Voltage (Vgs) :
20V
Terminal Finish :
Matte Tin (Sn)
Operating Temperature :
-55°C~175°C TJ
Package :
Tube
Configuration :
SINGLE WITH BUILT-IN DIODE
Drain to Source Breakdown Voltage :
55V
REACH SVHC :
No SVHC
FET Feature :
--
Manufacturer :
IXYS Corporation
Drain-source On Resistance-Max :
0.0051Ohm
Product Status :
Obsolete
Supplier Device Package :
ISOPLUS220™
Power Dissipation-Max :
300W Tc
Surface Mount :
No
Transistor Element Material :
SILICON
Qualification Status :
Not Qualified
Isolation Voltage :
2.5kV
Pin Count :
3
Published :
2001
Case Connection :
Isolated
Gate Charge (Qg) (Max) @ Vgs :
200nC @ 10V
Current - Continuous Drain (Id) @ 25°C :
200A Tc
Transistor Application :
SWITCHING
Terminal Position :
Single
Mounting Type :
Through Hole
Vgs(th) (Max) @ Id :
4V @ 2mA
Peak Reflow Temperature (Cel) :
260
ECCN Code :
EAR99
Element Configuration :
Single
Power Dissipation :
300W
RoHS Status :
RoHS Compliant
Threshold Voltage :
4V
Vgs (Max) :
±20V
Time@Peak Reflow Temperature-Max (s) :
35
Pbfree Code :
yes
DS Breakdown Voltage-Min :
55 V
Number of Terminals :
3
Number of Pins :
220
Package / Case :
ISOPLUS220™
Fall Time (Typ) :
155 ns
Series :
--
Number of Elements :
1
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Reach Compliance Code :
not_compliant
Rds On (Max) @ Id, Vgs :
5.1m Ω @ 100A, 10V
Turn-Off Delay Time :
230 ns
Rise Time :
115ns
Power Dissipation (Max) :
300W (Tc)
Continuous Drain Current (ID) :
200A
Number of Terminations :
3
FET Type :
N-Channel
Polarity/Channel Type :
N-Channel
Mount :
Through Hole
Drain to Source Voltage (Vdss) :
55V
Package Shape :
RECTANGULAR
Operating Mode :
ENHANCEMENT MODE
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Datasheets
IXUC200N055
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXUC200N055 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Mounting Type:Through Hole, Number of Pins:220, Package / Case:ISOPLUS220™, Number of Terminations:3, IXUC200N055 pinout, IXUC200N055 datasheet PDF, IXUC200N055 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXUC200N055 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXUC200N055


N-Channel Tube 5.1m Ω @ 100A, 10V ±20V 200nC @ 10V 55V ISOPLUS220™

IXUC200N055 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 500 mJ.Its continuous drain current is 200A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=55V, and this device has a drain-to-source breakdown voltage of 55V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 230 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 4V.For normal operation, maintain the DS breakdown voltage above 55 V.To operate this transistor, you need to apply a 55V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXUC200N055 Features


the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 200A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 230 ns
a threshold voltage of 4V
a 55V drain to source voltage (Vdss)


IXUC200N055 Applications


There are a lot of IXYS
IXUC200N055 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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