IXUC100N055

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Mfr.Part #
IXUC100N055
Manufacturer
Littelfuse
Package / Case
ISOPLUS220™
Datasheet
Download
Description
MOSFET N-CH 55V 100A ISOPLUS220
Stock
1,550
In Stock :
1,550

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Supplier Device Package :
ISOPLUS220™
FET Technology :
METAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min :
55 V
Operating Mode :
ENHANCEMENT MODE
Avalanche Energy Rating (Eas) :
500 mJ
Terminal Form :
THROUGH-HOLE
RoHS Status :
RoHS Compliant
Package Shape :
RECTANGULAR
Peak Reflow Temperature (Cel) :
260
Gate to Source Voltage (Vgs) :
20V
Surface Mount :
No
Gate Charge (Qg) (Max) @ Vgs :
100nC @ 10V
Terminal Finish :
Matte Tin (Sn)
Pin Count :
3
Case Connection :
Isolated
Dual Supply Voltage :
55V
Published :
2003
Nominal Vgs :
4 V
Drain to Source Breakdown Voltage :
55V
Mount :
Through Hole
Drain to Source Voltage (Vdss) :
55V
Package / Case :
ISOPLUS220™
Terminal Position :
Single
Power Dissipation-Max :
150W Tc
Element Configuration :
Single
Isolation Voltage :
2.5kV
FET Type :
N-Channel
Rds On (Max) @ Id, Vgs :
7.7m Ω @ 80A, 10V
JEDEC-95 Code :
TO-273AA
JESD-30 Code :
R-PSIP-T3
Termination :
Through Hole
Vgs (Max) :
±20V
Operating Temperature :
-55°C~175°C TJ
Transistor Element Material :
SILICON
Number of Terminals :
3
JESD-609 Code :
e3
Continuous Drain Current (ID) :
100A
Package :
Tube
Drain-source On Resistance-Max :
0.0077Ohm
Threshold Voltage :
4V
REACH SVHC :
No SVHC
Product Status :
Obsolete
Mounting Type :
Through Hole
Qualification Status :
Not Qualified
Number of Terminations :
3
Number of Pins :
220
FET Feature :
--
Power Dissipation :
150W
Drive Voltage (Max Rds On,Min Rds On) :
10V
Current - Continuous Drain (Id) @ 25°C :
100A Tc
Pbfree Code :
yes
Manufacturer :
IXYS Corporation
Packaging :
Tube
Vgs(th) (Max) @ Id :
4V @ 1mA
Fall Time (Typ) :
155 ns
Transistor Application :
SWITCHING
Turn-Off Delay Time :
230 ns
Rise Time :
115ns
Reverse Recovery Time :
80 ns
Reach Compliance Code :
not_compliant
Series :
--
Polarity/Channel Type :
N-Channel
Configuration :
SINGLE WITH BUILT-IN DIODE
ECCN Code :
EAR99
Power Dissipation (Max) :
150W (Tc)
Time@Peak Reflow Temperature-Max (s) :
35
Number of Elements :
1
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Datasheets
IXUC100N055
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXUC100N055 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:ISOPLUS220™, Operating Temperature:-55°C~175°C TJ, Mounting Type:Through Hole, Number of Terminations:3, Number of Pins:220, IXUC100N055 pinout, IXUC100N055 datasheet PDF, IXUC100N055 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXUC100N055 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXUC100N055


N-Channel Tube 7.7m Ω @ 80A, 10V ±20V 100nC @ 10V 55V ISOPLUS220™

IXUC100N055 Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 500 mJ (Eas).The drain current is the maximum continuous current the device can conduct, and this device has 100A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 55V, and this device has a drainage-to-source breakdown voltage of 55VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 230 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 4V, which means that it will not activate any of its functions when its threshold voltage reaches 4V.Normal operation requires that the DS breakdown voltage remain above 55 V.For this transistor to work, a voltage 55V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXUC100N055 Features


the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 230 ns
a threshold voltage of 4V
a 55V drain to source voltage (Vdss)


IXUC100N055 Applications


There are a lot of IXYS
IXUC100N055 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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