IXTJ6N150
- Mfr.Part #
- IXTJ6N150
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 1500V 3A TO247
- Stock
- 17,042
- In Stock :
- 17,042
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Continuous Drain Current (ID) :
- 3A
- Brand :
- IXYS
- Avalanche Energy Rating (Eas) :
- 500 mJ
- Package / Case :
- TO-247-3
- Packaging :
- Tube
- Case Connection :
- Isolated
- Transistor Element Material :
- SILICON
- Manufacturer :
- IXYS
- Series :
- --
- Terminal Position :
- Single
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- Channel Mode :
- Enhancement
- Transistor Polarity :
- N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 2230pF @ 25V
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Through Hole
- Product Status :
- Active
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- FET Type :
- N-Channel
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Pulsed Drain Current-Max (IDM) :
- 24A
- Vgs (Max) :
- ±30V
- Package :
- Tube
- Power Dissipation (Max) :
- 125W (Tc)
- JESD-30 Code :
- R-PSFM-T3
- Drain Current-Max (Abs) (ID) :
- 3A
- Gate Charge (Qg) (Max) @ Vgs :
- 67nC @ 10V
- Base Product Number :
- IXTJ6
- FET Feature :
- --
- Factory Lead Time :
- 24 Weeks
- Rds On (Max) @ Id, Vgs :
- 3.85 Ω @ 3A, 10V
- Minimum Operating Temperature :
- - 55 C
- Number of Terminations :
- 3
- Number of Channels :
- 1 Channel
- Mounting Style :
- Through Hole
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Reach Compliance Code :
- Unknown
- Maximum Operating Temperature :
- + 150 C
- Transistor Application :
- SWITCHING
- Supplier Device Package :
- TO-247
- Power Dissipation-Max :
- 125W Tc
- Number of Elements :
- 1
- Drain to Source Voltage (Vdss) :
- 1500V
- Published :
- 2013
- Subcategory :
- MOSFETs
- Current - Continuous Drain (Id) @ 25°C :
- 3A Tc
- Mount :
- Through Hole
- Product Category :
- MOSFET
- RoHS :
- Details
- Product Type :
- MOSFET
- DS Breakdown Voltage-Min :
- 1500V
- Datasheets
- IXTJ6N150
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N-Channel Tube 3.85 Ω @ 3A, 10V ±30V 2230pF @ 25V 67nC @ 10V 1500V TO-247-3
IXTJ6N150 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 500 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 2230pF @ 25V.This device has a continuous drain current (ID) of [3A], which is its maximum continuous current.A device's drain current is its maximum continuous current, and this device's drain current is 3A.A maximum pulsed drain current of 24A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 1500V.In order to operate this transistor, a voltage of 1500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXTJ6N150 Features
the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 3A
based on its rated peak drain current 24A.
a 1500V drain to source voltage (Vdss)
IXTJ6N150 Applications
There are a lot of IXYS
IXTJ6N150 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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