IXTJ4N150

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation (Max) :

110W (Tc)

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

Base Product Number :

IXTJ4

Brand :

IXYS

Package / Case :

TO-247-3

Package :

Tube

Power Dissipation-Max :

110W Tc

Transistor Application :

SWITCHING

Series :

--

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Product Status :

Active

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

6Ohm

Mounting Type :

Through Hole

FET Type :

N-Channel

Length :

6.13 mm

Width :

5.21 mm

Supplier Device Package :

TO-247

Continuous Drain Current (ID) :

2.5A

Case Connection :

Isolated

Manufacturer :

IXYS

Additional Feature :

AVALANCHE RATED, UL RECOGNIZED

Terminal Position :

Single

Channel Mode :

Enhancement

FET Feature :

--

Factory Lead Time :

24 Weeks

Product Category :

MOSFET

Reach Compliance Code :

Unknown

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tube

RoHS :

Details

DS Breakdown Voltage-Min :

1500V

Vgs (Max) :

±30V

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

6 Ω @ 2A, 10V

Avalanche Energy Rating (Eas) :

350 mJ

Vgs(th) (Max) @ Id :

5V @ 250μA

Mount :

Through Hole

Height :

21.34 mm

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

2.5A Tc

Maximum Operating Temperature :

+ 150 C

Minimum Operating Temperature :

- 55 C

Input Capacitance (Ciss) (Max) @ Vds :

1576pF @ 25V

Number of Channels :

1 Channel

Pulsed Drain Current-Max (IDM) :

12A

Type :

High Voltage Power MOSFET

JESD-30 Code :

R-PSFM-T3

Gate Charge (Qg) (Max) @ Vgs :

44.5nC @ 10V

Transistor Polarity :

N-Channel

Product Type :

MOSFET

Mounting Style :

Through Hole

Drain to Source Voltage (Vdss) :

1500V

Rise Time :

23 ns

Published :

2013

Configuration :

SINGLE WITH BUILT-IN DIODE