IXTI12N50P
- Mfr.Part #
- IXTI12N50P
- Manufacturer
- Littelfuse
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 12A TO262
- Stock
- 10,462
- In Stock :
- 10,462
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Base Product Number :
- IXTI12
- Reach Compliance Code :
- Compliant
- JEDEC-95 Code :
- TO-263
- Power Dissipation (Max) :
- 200W (Tc)
- Current - Continuous Drain (Id) @ 25°C :
- 12A Tc
- FET Type :
- N-Channel
- Product Status :
- Obsolete
- Drain to Source Voltage (Vdss) :
- 500V
- Element Configuration :
- Single
- Operating Temperature :
- -55°C~150°C TJ
- Turn-Off Delay Time :
- 55 ns
- JESD-30 Code :
- R-PSIP-T3
- Current Rating :
- 12A
- Series :
- Polar™
- Fall Time (Typ) :
- 20 ns
- Terminal Form :
- THROUGH-HOLE
- Power Dissipation :
- 200W
- Continuous Drain Current (ID) :
- 12A
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Published :
- 2006
- Gate Charge (Qg) (Max) @ Vgs :
- 29nC @ 10V
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Terminal Finish :
- Matte Tin (Sn)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drain Current-Max (Abs) (ID) :
- 12 A
- Gate to Source Voltage (Vgs) :
- 30V
- Manufacturer :
- IXYS Corporation
- Qualification Status :
- Not Qualified
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Drain to Source Breakdown Voltage :
- 500V
- Power Dissipation-Max (Abs) :
- 200 W
- Package :
- Tube
- Case Connection :
- DRAIN
- Pin Count :
- 4
- Power Dissipation-Max :
- 200W Tc
- Pbfree Code :
- yes
- Avalanche Energy Rating (Eas) :
- 600 mJ
- DS Breakdown Voltage-Min :
- 500 V
- Rise Time :
- 27ns
- Mounting Type :
- Through Hole
- Transistor Application :
- SWITCHING
- Operating Mode :
- ENHANCEMENT MODE
- Packaging :
- Tube
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pulsed Drain Current-Max (IDM) :
- 30 A
- Number of Terminations :
- 3
- Vgs (Max) :
- ±30V
- RoHS Status :
- RoHS Compliant
- Vgs(th) (Max) @ Id :
- 5.5V @ 250µA
- FET Feature :
- -
- Supplier Device Package :
- TO-262 (I2PAK)
- Voltage - Rated DC :
- 500V
- Drain-source On Resistance-Max :
- 0.5Ohm
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Number of Pins :
- 3
- Polarity/Channel Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 1830pF @ 25V
- Package Shape :
- RECTANGULAR
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Terminals :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Terminal Position :
- Single
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Rds On (Max) @ Id, Vgs :
- 500m Ω @ 6A, 10V
- Surface Mount :
- No
- Mount :
- Surface Mount, Through Hole
- Additional Feature :
- AVALANCHE RATED
- Datasheets
- IXTI12N50P
N-Channel Tube 500m Ω @ 6A, 10V ±30V 1830pF @ 25V 29nC @ 10V 500V TO-262-3 Long Leads, I2Pak, TO-262AA
IXTI12N50P Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 600 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1830pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 12A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=500V. And this device has 500V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 12 A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 55 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 30 A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 500 V in order to maintain normal operation.Operating this transistor requires a 500V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXTI12N50P Features
the avalanche energy rating (Eas) is 600 mJ
a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 55 ns
based on its rated peak drain current 30 A.
a 500V drain to source voltage (Vdss)
IXTI12N50P Applications
There are a lot of IXYS
IXTI12N50P applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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