IXTI12N50P

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Mfr.Part #
IXTI12N50P
Manufacturer
Littelfuse
Package / Case
TO-262-3 Long Leads, I2Pak, TO-262AA
Datasheet
Download
Description
MOSFET N-CH 500V 12A TO262
Stock
10,462
In Stock :
10,462

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Base Product Number :
IXTI12
Reach Compliance Code :
Compliant
JEDEC-95 Code :
TO-263
Power Dissipation (Max) :
200W (Tc)
Current - Continuous Drain (Id) @ 25°C :
12A Tc
FET Type :
N-Channel
Product Status :
Obsolete
Drain to Source Voltage (Vdss) :
500V
Element Configuration :
Single
Operating Temperature :
-55°C~150°C TJ
Turn-Off Delay Time :
55 ns
JESD-30 Code :
R-PSIP-T3
Current Rating :
12A
Series :
Polar™
Fall Time (Typ) :
20 ns
Terminal Form :
THROUGH-HOLE
Power Dissipation :
200W
Continuous Drain Current (ID) :
12A
Transistor Element Material :
SILICON
JESD-609 Code :
e3
Published :
2006
Gate Charge (Qg) (Max) @ Vgs :
29nC @ 10V
Number of Elements :
1
Lead Free :
Lead Free
Terminal Finish :
Matte Tin (Sn)
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Drain Current-Max (Abs) (ID) :
12 A
Gate to Source Voltage (Vgs) :
30V
Manufacturer :
IXYS Corporation
Qualification Status :
Not Qualified
Package / Case :
TO-262-3 Long Leads, I2Pak, TO-262AA
Drain to Source Breakdown Voltage :
500V
Power Dissipation-Max (Abs) :
200 W
Package :
Tube
Case Connection :
DRAIN
Pin Count :
4
Power Dissipation-Max :
200W Tc
Pbfree Code :
yes
Avalanche Energy Rating (Eas) :
600 mJ
DS Breakdown Voltage-Min :
500 V
Rise Time :
27ns
Mounting Type :
Through Hole
Transistor Application :
SWITCHING
Operating Mode :
ENHANCEMENT MODE
Packaging :
Tube
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pulsed Drain Current-Max (IDM) :
30 A
Number of Terminations :
3
Vgs (Max) :
±30V
RoHS Status :
RoHS Compliant
Vgs(th) (Max) @ Id :
5.5V @ 250µA
FET Feature :
-
Supplier Device Package :
TO-262 (I2PAK)
Voltage - Rated DC :
500V
Drain-source On Resistance-Max :
0.5Ohm
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Number of Pins :
3
Polarity/Channel Type :
N-Channel
Input Capacitance (Ciss) (Max) @ Vds :
1830pF @ 25V
Package Shape :
RECTANGULAR
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Number of Terminals :
3
Drive Voltage (Max Rds On,Min Rds On) :
10V
Terminal Position :
Single
Configuration :
SINGLE WITH BUILT-IN DIODE
Rds On (Max) @ Id, Vgs :
500m Ω @ 6A, 10V
Surface Mount :
No
Mount :
Surface Mount, Through Hole
Additional Feature :
AVALANCHE RATED
Datasheets
IXTI12N50P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTI12N50P from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:TO-262-3 Long Leads, I2Pak, TO-262AA, Mounting Type:Through Hole, Number of Terminations:3, Number of Pins:3, IXTI12N50P pinout, IXTI12N50P datasheet PDF, IXTI12N50P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTI12N50P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.



N-Channel Tube 500m Ω @ 6A, 10V ±30V 1830pF @ 25V 29nC @ 10V 500V TO-262-3 Long Leads, I2Pak, TO-262AA

IXTI12N50P Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 600 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1830pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 12A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=500V. And this device has 500V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 12 A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 55 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 30 A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 500 V in order to maintain normal operation.Operating this transistor requires a 500V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXTI12N50P Features


the avalanche energy rating (Eas) is 600 mJ
a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 55 ns
based on its rated peak drain current 30 A.
a 500V drain to source voltage (Vdss)


IXTI12N50P Applications


There are a lot of IXYS
IXTI12N50P applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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