IXTI10N60P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

200W

Operating Mode :

ENHANCEMENT MODE

Power Dissipation (Max) :

200W (Tc)

FET Feature :

--

Case Connection :

DRAIN

Drain-source On Resistance-Max :

0.74Ohm

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 10V

Gate to Source Voltage (Vgs) :

30V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Voltage - Rated DC :

600V

Base Product Number :

IXTI10

JESD-30 Code :

R-PSIP-T3

JEDEC-95 Code :

TO-263

Mounting Type :

Through Hole

Pbfree Code :

yes

Transistor Element Material :

SILICON

Manufacturer :

IXYS Corporation

Input Capacitance (Ciss) (Max) @ Vds :

1610pF @ 25V

Drain to Source Breakdown Voltage :

600V

Additional Feature :

AVALANCHE RATED

Packaging :

Tube

Drain to Source Voltage (Vdss) :

600V

Pulsed Drain Current-Max (IDM) :

30A

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

5V @ 100µA

Published :

2006

Terminal Finish :

Matte Tin (Sn)

Qualification Status :

Not Qualified

DS Breakdown Voltage-Min :

600 V

Turn-Off Delay Time :

55 ns

Reach Compliance Code :

Compliant

Number of Terminals :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package :

Tube

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Series :

PolarHV™

Terminal Position :

Single

Package Shape :

RECTANGULAR

Rise Time :

24ns

JESD-609 Code :

e3

Polarity/Channel Type :

N-Channel

Terminal Form :

THROUGH-HOLE

Surface Mount :

No

Fall Time (Typ) :

18 ns

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

740m Ω @ 5A, 10V

Avalanche Energy Rating (Eas) :

500 mJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current Rating :

10A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Mount :

Through Hole

Number of Terminations :

3

Continuous Drain Current (ID) :

10A

Power Dissipation-Max :

200W Tc

RoHS Status :

RoHS Compliant

Number of Elements :

1

Pin Count :

4

Element Configuration :

Single

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Vgs (Max) :

±30V

Supplier Device Package :

TO-262 (I2PAK)