IXTC75N10

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

260nC @ 10V

Surface Mount :

No

Power Dissipation (Max) :

230W (Tc)

JESD-609 Code :

e1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Continuous Drain Current (ID) :

72A

Drain to Source Voltage (Vdss) :

100V

Qualification Status :

Not Qualified

Number of Terminals :

3

Input Capacitance (Ciss) (Max) @ Vds :

4500pF @ 25V

Reach Compliance Code :

Compliant

Polarity/Channel Type :

N-Channel

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

RoHS Compliant

Mounting Type :

Through Hole

Operating Temperature :

-55°C~150°C TJ

Published :

2003

Turn-Off Delay Time :

100 ns

Number of Terminations :

3

Pulsed Drain Current-Max (IDM) :

300 A

Package / Case :

ISOPLUS220™

Number of Pins :

3

Manufacturer :

IXYS Corporation

Series :

MegaMOS™

FET Feature :

--

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Rds On (Max) @ Id, Vgs :

20m Ω @ 37.5A, 10V

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Breakdown Voltage :

100V

Package Shape :

RECTANGULAR

Current - Continuous Drain (Id) @ 25°C :

72A Tc

Mount :

Through Hole

Product Status :

Obsolete

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

72 A

Case Connection :

Isolated

Supplier Device Package :

ISOPLUS220™

Power Dissipation :

230W

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

4V @ 250µA

Pbfree Code :

yes

Rise Time :

60ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max (Abs) :

230 W

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

20V

Pin Count :

3

Power Dissipation-Max :

230W Tc

JESD-30 Code :

R-PSIP-T3

Terminal Form :

THROUGH-HOLE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

30 ns

Drain-source On Resistance-Max :

0.02Ohm

ECCN Code :

EAR99

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Element Configuration :

Single

Packaging :

Tube

DS Breakdown Voltage-Min :

100 V

Package :

Tube

Base Product Number :

IXTC75