IXTC110N25T

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Number of Terminations :

3

Drain Current-Max (Abs) (ID) :

50 A

Gate to Source Voltage (Vgs) :

20V

Pin Count :

3

Rise Time :

27ns

Product Status :

Obsolete

Turn-Off Delay Time :

60 ns

Manufacturer :

IXYS Corporation

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Surface Mount :

No

Drain-source On Resistance-Max :

0.027 Ω

JESD-609 Code :

e1

Vgs(th) (Max) @ Id :

4.5V @ 1mA

Reach Compliance Code :

Compliant

Base Product Number :

IXTC110

Rds On (Max) @ Id, Vgs :

27m Ω @ 55A, 10V

Mount :

Through Hole

Power Dissipation (Max) :

180W (Tc)

Pbfree Code :

yes

JESD-30 Code :

R-PSIP-T3

Transistor Element Material :

SILICON

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Supplier Device Package :

ISOPLUS220™

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package :

Tube

Package / Case :

ISOPLUS220™

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Series :

--

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±20V

Power Dissipation-Max (Abs) :

180 W

Continuous Drain Current (ID) :

50A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package Shape :

RECTANGULAR

Power Dissipation :

180W

Published :

2012

Number of Elements :

1

Qualification Status :

Not Qualified

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

250 V

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

9400pF @ 25V

Lead Free :

Lead Free

FET Feature :

--

Gate Charge (Qg) (Max) @ Vgs :

157nC @ 10V

Drain to Source Breakdown Voltage :

250V

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Through Hole

Terminal Form :

THROUGH-HOLE

Packaging :

Tube

Fall Time (Typ) :

27 ns

Case Connection :

Isolated

Resistance :

27mOhm

RoHS Status :

RoHS Compliant

Power Dissipation-Max :

180W Tc

Number of Terminals :

3

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Polarity/Channel Type :

N-Channel

Additional Feature :

AVALANCHE RATED, UL RECOGNIZED

Avalanche Energy Rating (Eas) :

1000 mJ

Pulsed Drain Current-Max (IDM) :

300 A

Number of Pins :

3

Drain to Source Voltage (Vdss) :

250V

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel