IXTC62N15P
- Mfr.Part #
- IXTC62N15P
- Manufacturer
- Littelfuse
- Package / Case
- ISOPLUS220™
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 36A ISOPLUS220
- Stock
- 31,779
- In Stock :
- 31,779
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- DS Breakdown Voltage-Min :
- 150V
- Transistor Element Material :
- SILICON
- Supplier Device Package :
- ISOPLUS220™
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Package / Case :
- ISOPLUS220™
- Pin Count :
- 3
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power Dissipation (Max) :
- 150W (Tc)
- Mount :
- Through Hole
- Packaging :
- Tube
- Current - Continuous Drain (Id) @ 25°C :
- 36A Tc
- Product Status :
- Obsolete
- Rds On (Max) @ Id, Vgs :
- 45m Ω @ 31A, 10V
- Base Product Number :
- IXTC62
- Polarity/Channel Type :
- N-Channel
- Published :
- 2006
- Power Dissipation-Max :
- 150W Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 2250pF @ 25V
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- RoHS Status :
- RoHS Compliant
- Operating Mode :
- ENHANCEMENT MODE
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Drain-source On Resistance-Max :
- 0.045Ohm
- Mounting Type :
- Through Hole
- Series :
- PolarHT™
- Transistor Application :
- SWITCHING
- Package :
- Tube
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Pbfree Code :
- yes
- Gate Charge (Qg) (Max) @ Vgs :
- 70nC @ 10V
- Operating Temperature :
- -55°C~175°C TJ
- Case Connection :
- Isolated
- Number of Terminations :
- 3
- JESD-30 Code :
- R-PSIP-T3
- Pulsed Drain Current-Max (IDM) :
- 150A
- Qualification Status :
- Not Qualified
- Terminal Form :
- THROUGH-HOLE
- Number of Terminals :
- 3
- Drain to Source Voltage (Vdss) :
- 150V
- FET Type :
- N-Channel
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- FET Feature :
- --
- JESD-609 Code :
- e1
- Manufacturer :
- IXYS Corporation
- Number of Elements :
- 1
- Terminal Position :
- Single
- Vgs (Max) :
- ±20V
- Continuous Drain Current (ID) :
- 36A
- Reach Compliance Code :
- Compliant
- Surface Mount :
- No
- Package Shape :
- RECTANGULAR
- Datasheets
- IXTC62N15P

N-Channel Tube 45m Ω @ 31A, 10V ±20V 2250pF @ 25V 70nC @ 10V 150V ISOPLUS220™
IXTC62N15P Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 1000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2250pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 36A continuous drain current (ID).Peak drain current is 150A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 150V.For this transistor to work, a voltage 150V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXTC62N15P Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 36A
based on its rated peak drain current 150A.
a 150V drain to source voltage (Vdss)
IXTC62N15P Applications
There are a lot of IXYS
IXTC62N15P applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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