IXTC26N50P
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- Mfr.Part #
- IXTC26N50P
- Manufacturer
- Littelfuse
- Package / Case
- ISOPLUS220™
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 15A ISOPLUS220
- Stock
- 37,580
- In Stock ：
- 37,580
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate Charge (Qg) (Max) @ Vgs :
- 65nC @ 10V
- Number of Elements :
- 1
- Gate to Source Voltage (Vgs) :
- 30V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- FET Feature :
- --
- Drain to Source Voltage (Vdss) :
- 500V
- FET Type :
- N-Channel
- Mount :
- Through Hole
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e1
- Polarity/Channel Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 3600pF @ 25V
- Power Dissipation (Max) :
- 130W (Tc)
- Rds On (Max) @ Id, Vgs :
- 260m Ω @ 13A, 10V
- Package / Case :
- ISOPLUS220™
- Terminal Form :
- THROUGH-HOLE
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Turn-Off Delay Time :
- 58 ns
- Operating Temperature :
- -55°C~150°C TJ
- RoHS Status :
- RoHS Compliant
- Package :
- Tube
- Base Product Number :
- IXTC26
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Terminations :
- 3
- Package Shape :
- RECTANGULAR
- Mounting Type :
- Through Hole
- Vgs(th) (Max) @ Id :
- 5.5V @ 250µA
- Lead Free :
- Lead Free
- Manufacturer :
- IXYS Corporation
- Pin Count :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- DS Breakdown Voltage-Min :
- 500 V
- Number of Pins :
- 3
- Surface Mount :
- No
- Supplier Device Package :
- ISOPLUS220™
- Pbfree Code :
- yes
- Qualification Status :
- Not Qualified
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rise Time :
- 25ns
- Transistor Application :
- SWITCHING
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Packaging :
- Tube
- Published :
- 2006
- Pulsed Drain Current-Max (IDM) :
- 78A
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation-Max :
- 130W Tc
- Terminal Position :
- Single
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- Fall Time (Typ) :
- 20 ns
- Power Dissipation :
- 130W
- Current Rating :
- 26A
- Vgs (Max) :
- ±30V
- Voltage - Rated DC :
- 500V
- Current - Continuous Drain (Id) @ 25°C :
- 15A Tc
- Case Connection :
- Isolated
- Product Status :
- Obsolete
- Reach Compliance Code :
- Compliant
- Number of Terminals :
- 3
- JESD-30 Code :
- R-PSIP-T3
- Continuous Drain Current (ID) :
- 15A
- Drain-source On Resistance-Max :
- 0.26Ohm
- Drain to Source Breakdown Voltage :
- 500V
- Element Configuration :
- Single
- Series :
- PolarHV™
- Datasheets
- IXTC26N50P
N-Channel Tube 260m Ω @ 13A, 10V ±30V 3600pF @ 25V 65nC @ 10V 500V ISOPLUS220™
IXTC26N50P Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1000 mJ.The maximum input capacitance of this device is 3600pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 15A.When VGS=500V, and ID flows to VDS at 500VVDS, the drain-source breakdown voltage is 500V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 58 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 78A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 500 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 500V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXTC26N50P Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 15A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 58 ns
based on its rated peak drain current 78A.
a 500V drain to source voltage (Vdss)
IXTC26N50P Applications
There are a lot of IXYS
IXTC26N50P applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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