IXTB62N50L
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- Mfr.Part #
- IXTB62N50L
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 62A PLUS264
- Stock
- 35,449
- In Stock ：
- 35,449
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pbfree Code :
- yes
- FET Type :
- N-Channel
- Element Configuration :
- Single
- Product Category :
- MOSFET
- Transistor Element Material :
- SILICON
- Minimum Operating Temperature :
- - 55 C
- Additional Feature :
- AVALANCHE RATED
- Package / Case :
- TO-264-3, TO-264AA
- JESD-609 Code :
- e1
- Number of Channels :
- 1 Channel
- Operating Mode :
- ENHANCEMENT MODE
- Configuration :
- Single
- Product Status :
- Active
- Vgs (Max) :
- ±30V
- Drain to Source Voltage (Vdss) :
- 500V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Drain Current (ID) :
- 62A
- Lead Free :
- Lead Free
- Packaging :
- Tube
- Avalanche Energy Rating (Eas) :
- 5000 mJ
- Power Dissipation-Max :
- 800W Tc
- Mounting Type :
- Through Hole
- Length :
- 20.29 mm
- RoHS Status :
- ROHS3 Compliant
- Transistor Polarity :
- N-Channel
- Pulsed Drain Current-Max (IDM) :
- 150A
- Rds On (Max) @ Id, Vgs :
- 100m Ω @ 31A, 20V
- Mounting Style :
- Through Hole
- FET Feature :
- --
- Series :
- --
- Drain to Source Breakdown Voltage :
- 500V
- RoHS :
- Details
- Power Dissipation (Max) :
- 800W (Tc)
- Transistor Type :
- 1 N-Channel
- Published :
- 2011
- Reach Compliance Code :
- Unknown
- Channel Mode :
- Enhancement
- Qualification Status :
- Not Qualified
- Resistance :
- 100MOhm
- Number of Pins :
- 3
- Number of Elements :
- 1
- Mount :
- Through Hole
- Operating Temperature :
- -55°C~150°C TJ
- Pin Count :
- 3
- Turn-Off Delay Time :
- 110 ns
- Vgs(th) (Max) @ Id :
- 5.5V @ 250µA
- Power Dissipation :
- 800W
- Gate to Source Voltage (Vgs) :
- 30V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Current - Continuous Drain (Id) @ 25°C :
- 62A Tc
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Brand :
- IXYS
- Transistor Application :
- SWITCHING
- Package :
- Tube
- Number of Terminations :
- 3
- Fall Time (Typ) :
- 75 ns
- Product Type :
- MOSFET
- Base Product Number :
- IXTB62
- Drive Voltage (Max Rds On,Min Rds On) :
- 20V
- Case Connection :
- DRAIN
- Gate Charge (Qg) (Max) @ Vgs :
- 550nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 11500pF @ 25V
- Supplier Device Package :
- PLUS264™
- Height :
- 26.59 mm
- Rise Time :
- 85ns
- Manufacturer :
- IXYS
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Width :
- 5.31 mm
- Maximum Operating Temperature :
- + 150 C
- Datasheets
- IXTB62N50L
N-Channel Tube 100m Ω @ 31A, 20V ±30V 11500pF @ 25V 550nC @ 20V 500V TO-264-3, TO-264AA
IXTB62N50L Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 5000 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 11500pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 62A amps.In this device, the drain-source breakdown voltage is 500V and VGS=500V, so the drain-source breakdown voltage is 500V in this case.It is [110 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 150A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.To operate this transistor, you will need a 500V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (20V).
IXTB62N50L Features
the avalanche energy rating (Eas) is 5000 mJ
a continuous drain current (ID) of 62A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 110 ns
based on its rated peak drain current 150A.
a 500V drain to source voltage (Vdss)
IXTB62N50L Applications
There are a lot of IXYS
IXTB62N50L applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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