IXTB30N100L
- Mfr.Part #
- IXTB30N100L
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 30A PLUS264
- Stock
- 17,320
- In Stock :
- 17,320
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS :
- Details
- Product Category :
- MOSFET
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Base Product Number :
- IXTB30
- Number of Terminations :
- 3
- Gate to Source Voltage (Vgs) :
- 30V
- Element Configuration :
- Single
- Channel Mode :
- Enhancement
- Number of Pins :
- 3
- Manufacturer :
- IXYS
- Pbfree Code :
- yes
- Power Dissipation-Max :
- 800W Tc
- FET Feature :
- --
- Maximum Operating Temperature :
- + 150 C
- Operating Temperature :
- -55°C~150°C TJ
- Case Connection :
- DRAIN
- Package / Case :
- TO-264-3, TO-264AA
- Vgs (Max) :
- ±30V
- Pin Count :
- 3
- JESD-609 Code :
- e1
- Type :
- Linear Power MOSFET
- Power Dissipation :
- 800W
- Drain to Source Breakdown Voltage :
- 1kV
- Drain to Source Voltage (Vdss) :
- 1000V
- Current - Continuous Drain (Id) @ 25°C :
- 30A Tc
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Drive Voltage (Max Rds On,Min Rds On) :
- 20V
- Length :
- 20.29 mm
- Mounting Style :
- Through Hole
- Gate Charge (Qg) (Max) @ Vgs :
- 545nC @ 20V
- Mount :
- Through Hole
- Mounting Type :
- Through Hole
- Turn-Off Delay Time :
- 100 ns
- Product Type :
- MOSFET
- Additional Feature :
- AVALANCHE RATED
- Width :
- 5.31 mm
- Qualification Status :
- Not Qualified
- Product Status :
- Active
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Input Capacitance (Ciss) (Max) @ Vds :
- 13200pF @ 25V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Height :
- 26.59 mm
- Lead Free :
- Lead Free
- Brand :
- IXYS
- Avalanche Energy Rating (Eas) :
- 2000 mJ
- Continuous Drain Current (ID) :
- 30A
- Reach Compliance Code :
- Unknown
- Number of Elements :
- 1
- Number of Channels :
- 1 Channel
- FET Type :
- N-Channel
- Package :
- Tube
- Rds On (Max) @ Id, Vgs :
- 450m Ω @ 500mA, 20V
- Power Dissipation (Max) :
- 800W (Tc)
- Transistor Polarity :
- N-Channel
- Supplier Device Package :
- PLUS264™
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pulsed Drain Current-Max (IDM) :
- 70A
- Published :
- 2010
- Rise Time :
- 70ns
- Packaging :
- Tube
- Fall Time (Typ) :
- 78 ns
- Transistor Application :
- SWITCHING
- Transistor Type :
- 1 N-Channel
- RoHS Status :
- ROHS3 Compliant
- Series :
- --
- Drain-source On Resistance-Max :
- 0.45Ohm
- Configuration :
- Single
- Operating Mode :
- ENHANCEMENT MODE
- Minimum Operating Temperature :
- - 55 C
- Transistor Element Material :
- SILICON
- Datasheets
- IXTB30N100L

N-Channel Tube 450m Ω @ 500mA, 20V ±30V 13200pF @ 25V 545nC @ 20V 1000V TO-264-3, TO-264AA
IXTB30N100L Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 2000 mJ.A device's maximum input capacitance is 13200pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 30A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=1kV, and this device has a drain-to-source breakdown voltage of 1kV voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 100 ns.Its maximum pulsed drain current is 70A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.To operate this transistor, you need to apply a 1000V drain to source voltage (Vdss).This device uses no drive voltage (20V) to reduce its overall power consumption.
IXTB30N100L Features
the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 70A.
a 1000V drain to source voltage (Vdss)
IXTB30N100L Applications
There are a lot of IXYS
IXTB30N100L applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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