IXTB30N100L

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Mfr.Part #
IXTB30N100L
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 1000V 30A PLUS264
Stock
17,320
In Stock :
17,320

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
RoHS :
Details
Product Category :
MOSFET
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Base Product Number :
IXTB30
Number of Terminations :
3
Gate to Source Voltage (Vgs) :
30V
Element Configuration :
Single
Channel Mode :
Enhancement
Number of Pins :
3
Manufacturer :
IXYS
Pbfree Code :
yes
Power Dissipation-Max :
800W Tc
FET Feature :
--
Maximum Operating Temperature :
+ 150 C
Operating Temperature :
-55°C~150°C TJ
Case Connection :
DRAIN
Package / Case :
TO-264-3, TO-264AA
Vgs (Max) :
±30V
Pin Count :
3
JESD-609 Code :
e1
Type :
Linear Power MOSFET
Power Dissipation :
800W
Drain to Source Breakdown Voltage :
1kV
Drain to Source Voltage (Vdss) :
1000V
Current - Continuous Drain (Id) @ 25°C :
30A Tc
Vgs(th) (Max) @ Id :
5V @ 250μA
Drive Voltage (Max Rds On,Min Rds On) :
20V
Length :
20.29 mm
Mounting Style :
Through Hole
Gate Charge (Qg) (Max) @ Vgs :
545nC @ 20V
Mount :
Through Hole
Mounting Type :
Through Hole
Turn-Off Delay Time :
100 ns
Product Type :
MOSFET
Additional Feature :
AVALANCHE RATED
Width :
5.31 mm
Qualification Status :
Not Qualified
Product Status :
Active
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Input Capacitance (Ciss) (Max) @ Vds :
13200pF @ 25V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Height :
26.59 mm
Lead Free :
Lead Free
Brand :
IXYS
Avalanche Energy Rating (Eas) :
2000 mJ
Continuous Drain Current (ID) :
30A
Reach Compliance Code :
Unknown
Number of Elements :
1
Number of Channels :
1 Channel
FET Type :
N-Channel
Package :
Tube
Rds On (Max) @ Id, Vgs :
450m Ω @ 500mA, 20V
Power Dissipation (Max) :
800W (Tc)
Transistor Polarity :
N-Channel
Supplier Device Package :
PLUS264™
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pulsed Drain Current-Max (IDM) :
70A
Published :
2010
Rise Time :
70ns
Packaging :
Tube
Fall Time (Typ) :
78 ns
Transistor Application :
SWITCHING
Transistor Type :
1 N-Channel
RoHS Status :
ROHS3 Compliant
Series :
--
Drain-source On Resistance-Max :
0.45Ohm
Configuration :
Single
Operating Mode :
ENHANCEMENT MODE
Minimum Operating Temperature :
- 55 C
Transistor Element Material :
SILICON
Datasheets
IXTB30N100L
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTB30N100L from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-264-3, TO-264AA, Type:Linear Power MOSFET, Mounting Type:Through Hole, Number of Channels:1 Channel, IXTB30N100L pinout, IXTB30N100L datasheet PDF, IXTB30N100L amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTB30N100L ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTB30N100L


N-Channel Tube 450m Ω @ 500mA, 20V ±30V 13200pF @ 25V 545nC @ 20V 1000V TO-264-3, TO-264AA

IXTB30N100L Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 2000 mJ.A device's maximum input capacitance is 13200pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 30A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=1kV, and this device has a drain-to-source breakdown voltage of 1kV voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 100 ns.Its maximum pulsed drain current is 70A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.To operate this transistor, you need to apply a 1000V drain to source voltage (Vdss).This device uses no drive voltage (20V) to reduce its overall power consumption.

IXTB30N100L Features


the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 70A.
a 1000V drain to source voltage (Vdss)


IXTB30N100L Applications


There are a lot of IXYS
IXTB30N100L applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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