IXKR40N60C

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Mfr.Part #
IXKR40N60C
Manufacturer
Littelfuse
Package / Case
ISOPLUS247™
Datasheet
Download
Description
MOSFET N-CH 600V 38A ISOPLUS247
Stock
31,077
In Stock :
31,077

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Resistance :
70mOhm
Current - Continuous Drain (Id) @ 25°C :
38A Tc
Packaging :
Tube
Surface Mount :
No
Continuous Drain Current (ID) :
38A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Terminals :
3
Minimum Operating Temperature :
- 40 C
Element Configuration :
Single
Transistor Element Material :
SILICON
Radiation Hardening :
No
Product Type :
MOSFET
Lead Free :
Lead Free
DS Breakdown Voltage-Min :
600 V
Height :
21.34 mm
Mount :
Through Hole
Package Shape :
RECTANGULAR
Length :
16.13 mm
Rds On (Max) @ Id, Vgs :
70m Ω @ 25A, 10V
REACH SVHC :
No SVHC
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
ECCN Code :
EAR99
Factory Lead Time :
28 Weeks
Drain to Source Voltage (Vdss) :
600V
Terminal Position :
Single
Polarity/Channel Type :
N-Channel
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Number of Elements :
1
Tradename :
CoolMOS, ISOPLUS247
Mounting Style :
Through Hole
Drain-source On Resistance-Max :
0.7 Ω
RoHS Status :
ROHS3 Compliant
Channel Mode :
Enhancement
Base Product Number :
IXKR40
Drain to Source Breakdown Voltage :
600V
Qualification Status :
Not Qualified
Pin Count :
3
Additional Feature :
AVALANCHE RATED
Vgs (Max) :
±20V
Number of Pins :
3
Avalanche Energy Rating (Eas) :
1800 mJ
Transistor Application :
SWITCHING
Published :
2001
Drive Voltage (Max Rds On,Min Rds On) :
10V
Isolation Voltage :
2.5kV
Package / Case :
ISOPLUS247™
Product Category :
MOSFET
Gate to Source Voltage (Vgs) :
20V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
JESD-609 Code :
e1
Gate Charge (Qg) (Max) @ Vgs :
250nC @ 10V
Fall Time (Typ) :
10 ns
Package :
Tube
Turn-Off Delay Time :
110 ns
Reach Compliance Code :
Compliant
Operating Temperature :
-40°C~150°C TJ
Number of Terminations :
3
Pbfree Code :
yes
Number of Channels :
1 Channel
Transistor Polarity :
N-Channel
Threshold Voltage :
3.9V
Rise Time :
30ns
Terminal Form :
THROUGH-HOLE
Transistor Type :
1 N-Channel
Mounting Type :
Through Hole
FET Feature :
Super Junction
FET Type :
N-Channel
Supplier Device Package :
ISOPLUS247™
RoHS :
Details
Maximum Operating Temperature :
+ 150 C
Drain Current-Max (Abs) (ID) :
38 A
Type :
CoolMOS Power MOSFET
Power Dissipation (Max) :
--
Series :
CoolMOS™
JESD-30 Code :
R-PSIP-T3
Configuration :
Single
Operating Mode :
ENHANCEMENT MODE
Max Power Dissipation :
280W
Width :
5.21 mm
Vgs(th) (Max) @ Id :
3.9V @ 3mA
Product Status :
Active
Power Dissipation :
280W
Manufacturer :
IXYS
Case Connection :
Isolated
Brand :
IXYS
Datasheets
IXKR40N60C
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXKR40N60C from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Package / Case:ISOPLUS247™, Operating Temperature:-40°C~150°C TJ, Number of Terminations:3, Number of Channels:1 Channel, Mounting Type:Through Hole, Type:CoolMOS Power MOSFET, IXKR40N60C pinout, IXKR40N60C datasheet PDF, IXKR40N60C amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXKR40N60C ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXKR40N60C


N-Channel Tube 70m Ω @ 25A, 10V ±20V 250nC @ 10V 600V ISOPLUS247™

IXKR40N60C Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1800 mJ.This device's continuous drain current (ID) is 38A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 600V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 38 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 110 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 3.9V threshold voltage.To maintain normal operation, it is recommended that the DS breakdown voltage be above 600 V.This transistor requires a 600V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXKR40N60C Features


the avalanche energy rating (Eas) is 1800 mJ
a continuous drain current (ID) of 38A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 110 ns
a threshold voltage of 3.9V
a 600V drain to source voltage (Vdss)


IXKR40N60C Applications


There are a lot of IXYS
IXKR40N60C applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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