IXKR40N60C
- Mfr.Part #
- IXKR40N60C
- Manufacturer
- Littelfuse
- Package / Case
- ISOPLUS247™
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 38A ISOPLUS247
- Stock
- 31,077
- In Stock :
- 31,077
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Resistance :
- 70mOhm
- Current - Continuous Drain (Id) @ 25°C :
- 38A Tc
- Packaging :
- Tube
- Surface Mount :
- No
- Continuous Drain Current (ID) :
- 38A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminals :
- 3
- Minimum Operating Temperature :
- - 40 C
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Product Type :
- MOSFET
- Lead Free :
- Lead Free
- DS Breakdown Voltage-Min :
- 600 V
- Height :
- 21.34 mm
- Mount :
- Through Hole
- Package Shape :
- RECTANGULAR
- Length :
- 16.13 mm
- Rds On (Max) @ Id, Vgs :
- 70m Ω @ 25A, 10V
- REACH SVHC :
- No SVHC
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- ECCN Code :
- EAR99
- Factory Lead Time :
- 28 Weeks
- Drain to Source Voltage (Vdss) :
- 600V
- Terminal Position :
- Single
- Polarity/Channel Type :
- N-Channel
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Number of Elements :
- 1
- Tradename :
- CoolMOS, ISOPLUS247
- Mounting Style :
- Through Hole
- Drain-source On Resistance-Max :
- 0.7 Ω
- RoHS Status :
- ROHS3 Compliant
- Channel Mode :
- Enhancement
- Base Product Number :
- IXKR40
- Drain to Source Breakdown Voltage :
- 600V
- Qualification Status :
- Not Qualified
- Pin Count :
- 3
- Additional Feature :
- AVALANCHE RATED
- Vgs (Max) :
- ±20V
- Number of Pins :
- 3
- Avalanche Energy Rating (Eas) :
- 1800 mJ
- Transistor Application :
- SWITCHING
- Published :
- 2001
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Isolation Voltage :
- 2.5kV
- Package / Case :
- ISOPLUS247™
- Product Category :
- MOSFET
- Gate to Source Voltage (Vgs) :
- 20V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- JESD-609 Code :
- e1
- Gate Charge (Qg) (Max) @ Vgs :
- 250nC @ 10V
- Fall Time (Typ) :
- 10 ns
- Package :
- Tube
- Turn-Off Delay Time :
- 110 ns
- Reach Compliance Code :
- Compliant
- Operating Temperature :
- -40°C~150°C TJ
- Number of Terminations :
- 3
- Pbfree Code :
- yes
- Number of Channels :
- 1 Channel
- Transistor Polarity :
- N-Channel
- Threshold Voltage :
- 3.9V
- Rise Time :
- 30ns
- Terminal Form :
- THROUGH-HOLE
- Transistor Type :
- 1 N-Channel
- Mounting Type :
- Through Hole
- FET Feature :
- Super Junction
- FET Type :
- N-Channel
- Supplier Device Package :
- ISOPLUS247™
- RoHS :
- Details
- Maximum Operating Temperature :
- + 150 C
- Drain Current-Max (Abs) (ID) :
- 38 A
- Type :
- CoolMOS Power MOSFET
- Power Dissipation (Max) :
- --
- Series :
- CoolMOS™
- JESD-30 Code :
- R-PSIP-T3
- Configuration :
- Single
- Operating Mode :
- ENHANCEMENT MODE
- Max Power Dissipation :
- 280W
- Width :
- 5.21 mm
- Vgs(th) (Max) @ Id :
- 3.9V @ 3mA
- Product Status :
- Active
- Power Dissipation :
- 280W
- Manufacturer :
- IXYS
- Case Connection :
- Isolated
- Brand :
- IXYS
- Datasheets
- IXKR40N60C

N-Channel Tube 70m Ω @ 25A, 10V ±20V 250nC @ 10V 600V ISOPLUS247™
IXKR40N60C Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1800 mJ.This device's continuous drain current (ID) is 38A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 600V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 38 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 110 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 3.9V threshold voltage.To maintain normal operation, it is recommended that the DS breakdown voltage be above 600 V.This transistor requires a 600V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXKR40N60C Features
the avalanche energy rating (Eas) is 1800 mJ
a continuous drain current (ID) of 38A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 110 ns
a threshold voltage of 3.9V
a 600V drain to source voltage (Vdss)
IXKR40N60C Applications
There are a lot of IXYS
IXKR40N60C applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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