IXKR25N80C

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Mfr.Part #
IXKR25N80C
Manufacturer
Littelfuse
Package / Case
ISOPLUS247™
Datasheet
Download
Description
MOSFET N-CH 800V 25A ISOPLUS247
Stock
28,920
In Stock :
28,920

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Transistor Type :
1 N-Channel
Drain Current-Max (Abs) (ID) :
25 A
Maximum Operating Temperature :
+ 150 C
Gate Charge (Qg) (Max) @ Vgs :
355nC @ 10V
Published :
2008
Pbfree Code :
yes
Package / Case :
ISOPLUS247™
Drain to Source Voltage (Vdss) :
800V
Mount :
Through Hole
Minimum Operating Temperature :
- 40 C
Mounting Type :
Through Hole
Gate to Source Voltage (Vgs) :
20V
Package :
Tube
Pin Count :
3
Power Dissipation :
250W
Base Product Number :
IXKR25
Surface Mount :
No
Rise Time :
15ns
Length :
16.13 mm
Drain to Source Breakdown Voltage :
800V
Current - Continuous Drain (Id) @ 25°C :
25A Tc
Supplier Device Package :
ISOPLUS247™
Power Dissipation (Max) :
--
Transistor Element Material :
SILICON
Vgs (Max) :
±20V
DS Breakdown Voltage-Min :
800 V
Resistance :
125mOhm
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Terminal Position :
Single
Isolation Voltage :
2.5kV
Package Shape :
RECTANGULAR
Number of Pins :
3
Terminal Form :
THROUGH-HOLE
Packaging :
Tube
REACH SVHC :
No SVHC
Configuration :
Single
Number of Channels :
1 Channel
Width :
5.21 mm
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Mounting Style :
Through Hole
RoHS Status :
ROHS3 Compliant
Continuous Drain Current (ID) :
25A
Vgs(th) (Max) @ Id :
4V @ 2mA
Number of Terminals :
3
Avalanche Energy Rating (Eas) :
670 mJ
Product Type :
MOSFET
Transistor Application :
SWITCHING
Threshold Voltage :
4V
Element Configuration :
Single
Channel Mode :
Enhancement
Manufacturer :
IXYS
Number of Terminations :
3
FET Feature :
Super Junction
FET Type :
N-Channel
JESD-609 Code :
e1
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Height :
21.34 mm
Factory Lead Time :
28 Weeks
Operating Temperature :
-40°C~150°C TJ
Product Status :
Active
Lead Free :
Lead Free
Number of Elements :
1
Brand :
IXYS
Drive Voltage (Max Rds On,Min Rds On) :
10V
Turn-Off Delay Time :
72 ns
Max Power Dissipation :
250W
Case Connection :
Isolated
Product Category :
MOSFET
Transistor Polarity :
N-Channel
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Rds On (Max) @ Id, Vgs :
150m Ω @ 18A, 10V
Drain-source On Resistance-Max :
0.15 Ω
Series :
CoolMOS™
Tradename :
CoolMOS
Qualification Status :
Not Qualified
ECCN Code :
EAR99
RoHS :
Details
Polarity/Channel Type :
N-Channel
Operating Mode :
ENHANCEMENT MODE
Reach Compliance Code :
Compliant
Fall Time (Typ) :
6 ns
JESD-30 Code :
R-PSIP-T3
Datasheets
IXKR25N80C
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXKR25N80C from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:ISOPLUS247™, Mounting Type:Through Hole, Number of Pins:3, Number of Channels:1 Channel, Number of Terminations:3, Operating Temperature:-40°C~150°C TJ, IXKR25N80C pinout, IXKR25N80C datasheet PDF, IXKR25N80C amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXKR25N80C ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXKR25N80C


N-Channel Tube 150m Ω @ 18A, 10V ±20V 355nC @ 10V 800V ISOPLUS247™

IXKR25N80C Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 670 mJ.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 25A.With a drain-source breakdown voltage of 800V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 800V.25 A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 72 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.4V is the threshold voltage at which an electrical device activates any of its operations.To maintain normal operation, the DS breakdown voltage should be kept above 800 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 800V.Using drive voltage (10V) reduces this device's overall power consumption.

IXKR25N80C Features


the avalanche energy rating (Eas) is 670 mJ
a continuous drain current (ID) of 25A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 72 ns
a threshold voltage of 4V
a 800V drain to source voltage (Vdss)


IXKR25N80C Applications


There are a lot of IXYS
IXKR25N80C applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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