IXKR25N80C
- Mfr.Part #
- IXKR25N80C
- Manufacturer
- Littelfuse
- Package / Case
- ISOPLUS247™
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 25A ISOPLUS247
- Stock
- 28,920
- In Stock :
- 28,920
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Type :
- 1 N-Channel
- Drain Current-Max (Abs) (ID) :
- 25 A
- Maximum Operating Temperature :
- + 150 C
- Gate Charge (Qg) (Max) @ Vgs :
- 355nC @ 10V
- Published :
- 2008
- Pbfree Code :
- yes
- Package / Case :
- ISOPLUS247™
- Drain to Source Voltage (Vdss) :
- 800V
- Mount :
- Through Hole
- Minimum Operating Temperature :
- - 40 C
- Mounting Type :
- Through Hole
- Gate to Source Voltage (Vgs) :
- 20V
- Package :
- Tube
- Pin Count :
- 3
- Power Dissipation :
- 250W
- Base Product Number :
- IXKR25
- Surface Mount :
- No
- Rise Time :
- 15ns
- Length :
- 16.13 mm
- Drain to Source Breakdown Voltage :
- 800V
- Current - Continuous Drain (Id) @ 25°C :
- 25A Tc
- Supplier Device Package :
- ISOPLUS247™
- Power Dissipation (Max) :
- --
- Transistor Element Material :
- SILICON
- Vgs (Max) :
- ±20V
- DS Breakdown Voltage-Min :
- 800 V
- Resistance :
- 125mOhm
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Terminal Position :
- Single
- Isolation Voltage :
- 2.5kV
- Package Shape :
- RECTANGULAR
- Number of Pins :
- 3
- Terminal Form :
- THROUGH-HOLE
- Packaging :
- Tube
- REACH SVHC :
- No SVHC
- Configuration :
- Single
- Number of Channels :
- 1 Channel
- Width :
- 5.21 mm
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mounting Style :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Continuous Drain Current (ID) :
- 25A
- Vgs(th) (Max) @ Id :
- 4V @ 2mA
- Number of Terminals :
- 3
- Avalanche Energy Rating (Eas) :
- 670 mJ
- Product Type :
- MOSFET
- Transistor Application :
- SWITCHING
- Threshold Voltage :
- 4V
- Element Configuration :
- Single
- Channel Mode :
- Enhancement
- Manufacturer :
- IXYS
- Number of Terminations :
- 3
- FET Feature :
- Super Junction
- FET Type :
- N-Channel
- JESD-609 Code :
- e1
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Height :
- 21.34 mm
- Factory Lead Time :
- 28 Weeks
- Operating Temperature :
- -40°C~150°C TJ
- Product Status :
- Active
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Brand :
- IXYS
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Turn-Off Delay Time :
- 72 ns
- Max Power Dissipation :
- 250W
- Case Connection :
- Isolated
- Product Category :
- MOSFET
- Transistor Polarity :
- N-Channel
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 150m Ω @ 18A, 10V
- Drain-source On Resistance-Max :
- 0.15 Ω
- Series :
- CoolMOS™
- Tradename :
- CoolMOS
- Qualification Status :
- Not Qualified
- ECCN Code :
- EAR99
- RoHS :
- Details
- Polarity/Channel Type :
- N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- Reach Compliance Code :
- Compliant
- Fall Time (Typ) :
- 6 ns
- JESD-30 Code :
- R-PSIP-T3
- Datasheets
- IXKR25N80C

N-Channel Tube 150m Ω @ 18A, 10V ±20V 355nC @ 10V 800V ISOPLUS247™
IXKR25N80C Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 670 mJ.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 25A.With a drain-source breakdown voltage of 800V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 800V.25 A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 72 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.4V is the threshold voltage at which an electrical device activates any of its operations.To maintain normal operation, the DS breakdown voltage should be kept above 800 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 800V.Using drive voltage (10V) reduces this device's overall power consumption.
IXKR25N80C Features
the avalanche energy rating (Eas) is 670 mJ
a continuous drain current (ID) of 25A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 72 ns
a threshold voltage of 4V
a 800V drain to source voltage (Vdss)
IXKR25N80C Applications
There are a lot of IXYS
IXKR25N80C applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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