IXKH47N60C

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Mfr.Part #
IXKH47N60C
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 600V 47A TO247AD
Stock
290
In Stock :
290

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Radiation Hardening :
No
Drain to Source Voltage (Vdss) :
600V
Gate to Source Voltage (Vgs) :
20V
Terminal Form :
THROUGH-HOLE
Brand :
IXYS
FET Feature :
Super Junction
FET Type :
N-Channel
Drain-source On Resistance-Max :
0.07 Ω
Package / Case :
TO-247-3
Operating Mode :
ENHANCEMENT MODE
Pbfree Code :
yes
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Turn-Off Delay Time :
111 ns
Mounting Style :
Through Hole
Case Connection :
DRAIN
Additional Feature :
AVALANCHE RATED
Configuration :
Single
RoHS :
Details
Polarity/Channel Type :
N-Channel
Maximum Operating Temperature :
+ 150 C
Power Dissipation :
290W
Base Product Number :
IXKH47
Fall Time (Typ) :
10 ns
Transistor Polarity :
N-Channel
Surface Mount :
No
Height :
21.45 mm
Mounting Type :
Through Hole
Number of Elements :
1
Lead Free :
Lead Free
Drain to Source Breakdown Voltage :
600V
Current - Continuous Drain (Id) @ 25°C :
47A Tc
Supplier Device Package :
TO-247AD (IXKH)
Number of Terminals :
3
Width :
5.3 mm
Power Dissipation (Max) :
--
Element Configuration :
Single
Product Category :
MOSFET
Length :
16.24 mm
Minimum Operating Temperature :
- 55 C
Published :
2008
Gate Charge (Qg) (Max) @ Vgs :
650nC @ 10V
Tradename :
CoolMOS
DS Breakdown Voltage-Min :
600 V
Rise Time :
27ns
Channel Mode :
Enhancement
JESD-30 Code :
R-PSFM-T3
Product Status :
Active
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Transistor Application :
SWITCHING
Pin Count :
3
RoHS Status :
ROHS3 Compliant
Continuous Drain Current (ID) :
47A
Vgs(th) (Max) @ Id :
4V @ 2mA
Package Shape :
RECTANGULAR
Transistor Element Material :
SILICON
Number of Channels :
1 Channel
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Drive Voltage (Max Rds On,Min Rds On) :
10V
Package :
Tube
Series :
CoolMOS™
JEDEC-95 Code :
TO-247AD
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Packaging :
Tube
Mount :
Through Hole
Avalanche Energy Rating (Eas) :
1800 mJ
Manufacturer :
IXYS
Vgs (Max) :
±20V
Product Type :
MOSFET
Factory Lead Time :
61 Weeks
Resistance :
70mOhm
Number of Terminations :
3
Qualification Status :
Not Qualified
Transistor Type :
1 N-Channel
Rds On (Max) @ Id, Vgs :
70m Ω @ 30A, 10V
Reach Compliance Code :
Compliant
Drain Current-Max (Abs) (ID) :
47 A
Operating Temperature :
-55°C~150°C TJ
Type :
CoolMOS Power MOSFET
JESD-609 Code :
e1
Terminal Position :
Single
Datasheets
IXKH47N60C
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXKH47N60C from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-247-3, Mounting Type:Through Hole, Number of Channels:1 Channel, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Type:CoolMOS Power MOSFET, IXKH47N60C pinout, IXKH47N60C datasheet PDF, IXKH47N60C amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXKH47N60C ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXKH47N60C


N-Channel Tube 70m Ω @ 30A, 10V ±20V 650nC @ 10V 600V TO-247-3

IXKH47N60C Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 1800 mJ.This device conducts a continuous drain current (ID) of 47A, which is the maximum continuous current transistor can conduct.Using VGS=600V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 600V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 47 A.When the device is turned off, a turn-off delay time of 111 ns occurs as the input capacitance charges before drain current conduction commences.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.A normal operation of the DS requires keeping the breakdown voltage above 600 V.This transistor requires a drain-source voltage (Vdss) of 600V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IXKH47N60C Features


the avalanche energy rating (Eas) is 1800 mJ
a continuous drain current (ID) of 47A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 111 ns
a 600V drain to source voltage (Vdss)


IXKH47N60C Applications


There are a lot of IXYS
IXKH47N60C applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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