IXKH47N60C
- Mfr.Part #
- IXKH47N60C
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 47A TO247AD
- Stock
- 290
- In Stock :
- 290
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Radiation Hardening :
- No
- Drain to Source Voltage (Vdss) :
- 600V
- Gate to Source Voltage (Vgs) :
- 20V
- Terminal Form :
- THROUGH-HOLE
- Brand :
- IXYS
- FET Feature :
- Super Junction
- FET Type :
- N-Channel
- Drain-source On Resistance-Max :
- 0.07 Ω
- Package / Case :
- TO-247-3
- Operating Mode :
- ENHANCEMENT MODE
- Pbfree Code :
- yes
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Turn-Off Delay Time :
- 111 ns
- Mounting Style :
- Through Hole
- Case Connection :
- DRAIN
- Additional Feature :
- AVALANCHE RATED
- Configuration :
- Single
- RoHS :
- Details
- Polarity/Channel Type :
- N-Channel
- Maximum Operating Temperature :
- + 150 C
- Power Dissipation :
- 290W
- Base Product Number :
- IXKH47
- Fall Time (Typ) :
- 10 ns
- Transistor Polarity :
- N-Channel
- Surface Mount :
- No
- Height :
- 21.45 mm
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Drain to Source Breakdown Voltage :
- 600V
- Current - Continuous Drain (Id) @ 25°C :
- 47A Tc
- Supplier Device Package :
- TO-247AD (IXKH)
- Number of Terminals :
- 3
- Width :
- 5.3 mm
- Power Dissipation (Max) :
- --
- Element Configuration :
- Single
- Product Category :
- MOSFET
- Length :
- 16.24 mm
- Minimum Operating Temperature :
- - 55 C
- Published :
- 2008
- Gate Charge (Qg) (Max) @ Vgs :
- 650nC @ 10V
- Tradename :
- CoolMOS
- DS Breakdown Voltage-Min :
- 600 V
- Rise Time :
- 27ns
- Channel Mode :
- Enhancement
- JESD-30 Code :
- R-PSFM-T3
- Product Status :
- Active
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Application :
- SWITCHING
- Pin Count :
- 3
- RoHS Status :
- ROHS3 Compliant
- Continuous Drain Current (ID) :
- 47A
- Vgs(th) (Max) @ Id :
- 4V @ 2mA
- Package Shape :
- RECTANGULAR
- Transistor Element Material :
- SILICON
- Number of Channels :
- 1 Channel
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package :
- Tube
- Series :
- CoolMOS™
- JEDEC-95 Code :
- TO-247AD
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tube
- Mount :
- Through Hole
- Avalanche Energy Rating (Eas) :
- 1800 mJ
- Manufacturer :
- IXYS
- Vgs (Max) :
- ±20V
- Product Type :
- MOSFET
- Factory Lead Time :
- 61 Weeks
- Resistance :
- 70mOhm
- Number of Terminations :
- 3
- Qualification Status :
- Not Qualified
- Transistor Type :
- 1 N-Channel
- Rds On (Max) @ Id, Vgs :
- 70m Ω @ 30A, 10V
- Reach Compliance Code :
- Compliant
- Drain Current-Max (Abs) (ID) :
- 47 A
- Operating Temperature :
- -55°C~150°C TJ
- Type :
- CoolMOS Power MOSFET
- JESD-609 Code :
- e1
- Terminal Position :
- Single
- Datasheets
- IXKH47N60C
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N-Channel Tube 70m Ω @ 30A, 10V ±20V 650nC @ 10V 600V TO-247-3
IXKH47N60C Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 1800 mJ.This device conducts a continuous drain current (ID) of 47A, which is the maximum continuous current transistor can conduct.Using VGS=600V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 600V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 47 A.When the device is turned off, a turn-off delay time of 111 ns occurs as the input capacitance charges before drain current conduction commences.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.A normal operation of the DS requires keeping the breakdown voltage above 600 V.This transistor requires a drain-source voltage (Vdss) of 600V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXKH47N60C Features
the avalanche energy rating (Eas) is 1800 mJ
a continuous drain current (ID) of 47A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 111 ns
a 600V drain to source voltage (Vdss)
IXKH47N60C Applications
There are a lot of IXYS
IXKH47N60C applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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