IXKH35N60C5
- Mfr.Part #
- IXKH35N60C5
- Manufacturer
- Littelfuse
- Package / Case
- TO-3P-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 35A TO247AD
- Stock
- 22,611
- In Stock :
- 22,611
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Element Material :
- SILICON
- Length :
- 16.24 mm
- Transistor Application :
- SWITCHING
- Pin Count :
- 3
- Resistance :
- 100MOhm
- Brand :
- IXYS
- Tradename :
- CoolMOS
- Power Dissipation :
- 357W
- FET Type :
- N-Channel
- Fall Time (Typ) :
- 5 ns
- Reach Compliance Code :
- Unknown
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Polarity :
- N-Channel
- Manufacturer :
- IXYS
- Supplier Device Package :
- TO-247AD (IXKH)
- Width :
- 5.3 mm
- Mounting Style :
- Through Hole
- Lead Free :
- Lead Free
- Published :
- 2009
- Drain to Source Voltage (Vdss) :
- 600V
- Case Connection :
- DRAIN
- Current - Continuous Drain (Id) @ 25°C :
- 35A Tc
- Number of Elements :
- 1
- Number of Channels :
- 1 Channel
- Packaging :
- Tube
- Qualification Status :
- Not Qualified
- Element Configuration :
- Single
- Factory Lead Time :
- 20 Weeks
- Mount :
- Through Hole
- Vgs(th) (Max) @ Id :
- 3.9V @ 1.2mA
- Gate Charge (Qg) (Max) @ Vgs :
- 70nC @ 10V
- Minimum Operating Temperature :
- - 55 C
- Height :
- 21.45 mm
- Avalanche Energy Rating (Eas) :
- 800 mJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Feature :
- Super Junction
- Package :
- Tube
- Maximum Operating Temperature :
- + 150 C
- Configuration :
- Single
- JESD-30 Code :
- R-PSFM-T3
- Rise Time :
- 5ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 2800pF @ 100V
- Product Status :
- Active
- JEDEC-95 Code :
- TO-247AD
- Additional Feature :
- AVALANCHE RATED
- RoHS Status :
- ROHS3 Compliant
- Product Type :
- MOSFET
- Product Category :
- MOSFET
- Pbfree Code :
- yes
- Number of Terminations :
- 3
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- TO-3P-3 Full Pack
- Channel Mode :
- Enhancement
- RoHS :
- Details
- Transistor Type :
- 1 N-Channel
- Power Dissipation (Max) :
- --
- Rds On (Max) @ Id, Vgs :
- 100m Ω @ 18A, 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Series :
- CoolMOS™
- Type :
- CoolMOS Power MOSFET
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mounting Type :
- Through Hole
- Vgs (Max) :
- ±20V
- Drain to Source Breakdown Voltage :
- 600V
- Base Product Number :
- IXKH35
- Continuous Drain Current (ID) :
- 35A
- Gate to Source Voltage (Vgs) :
- 20V
- Datasheets
- IXKH35N60C5
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N-Channel Tube 100m Ω @ 18A, 10V ±20V 2800pF @ 100V 70nC @ 10V 600V TO-3P-3 Full Pack
IXKH35N60C5 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 800 mJ.A device's maximal input capacitance is 2800pF @ 100V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 35A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 600V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 600V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXKH35N60C5 Features
the avalanche energy rating (Eas) is 800 mJ
a continuous drain current (ID) of 35A
a drain-to-source breakdown voltage of 600V voltage
a 600V drain to source voltage (Vdss)
IXKH35N60C5 Applications
There are a lot of IXYS
IXKH35N60C5 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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