IXGT72N60B3

Manufacturer :

Littelfuse

Product Category :

Transistors - IGBTs - Single

RoHS Status :

ROHS3 Compliant

Surface Mount :

yes

JESD-609 Code :

e3

Package Shape :

RECTANGULAR

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Package :

Tube

JEDEC-95 Code :

TO-268AA

Factory Lead Time :

20 Weeks

Terminal Position :

Single

Turn On Time :

63 ns

Mount :

Surface Mount

Reach Compliance Code :

not_compliant

Input Type :

Standard

Number of Terminations :

2

Manufacturer :

IXYS Corporation

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

LOW CONDUCTION LOSS

Configuration :

Single

Series :

GenX3™

Polarity/Channel Type :

N-Channel

Transistor Element Material :

SILICON

Collector Emitter Voltage (VCEO) :

1.8V

Max Power Dissipation :

540W

Collector Current-Max (IC) :

75 A

Power - Max :

540W

Base Product Number :

IXGT72

Current - Collector (Ic) (Max) :

75A

Qualification Status :

Not Qualified

Voltage - Collector Emitter Breakdown (Max) :

600V

Pin Count :

4

Pbfree Code :

yes

Collector-Emitter Voltage-Max :

600 V

Case Connection :

COLLECTOR

IGBT Type :

PT

Number of Terminals :

2

Current - Collector Pulsed (Icm) :

400A

Packaging :

Tube

Collector Emitter Breakdown Voltage :

600V

Power Dissipation-Max (Abs) :

540 W

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature (Max) :

150°C

JESD-30 Code :

R-PSSO-G2

Terminal Finish :

Matte Tin (Sn)

Fall Time-Max (tf) :

160ns

Terminal Form :

Gull wing

Number of Elements :

1

Operating Temperature :

--

Product Status :

Obsolete

Transistor Application :

POWER CONTROL

Max Collector Current :

75A

Gate-Emitter Thr Voltage-Max :

5V

Gate-Emitter Voltage-Max :

20V

Turn Off Time-Nom (toff) :

370 ns

Td (on/off) @ 25°C :

31ns/150ns

Vce(on) (Max) @ Vge, Ic :

1.8V @ 15V, 60A

Test Condition :

480V, 50A, 3 Ω, 15V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Supplier Device Package :

TO-268

Switching Energy :

1.38mJ (on), 1.05mJ (off)

Gate Charge :

230nC